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Question 2: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 5*10^15/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Correct Answer: 1.1

Question 2: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 5*10^15/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Correct Answer: 1.1

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Question 2: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 5*10^15/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Correct Answer: 1.1
Transcribed Image Text:Question 2: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 5*10^15/cc, 1000 times more donor doping, and forward bias of 0.52 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Correct Answer: 1.1
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