A cleaved-facet, DH GaAs laser has an active layer thickness of 0.1 μm, a length of 300μm, and a threshold current density of 1 kA/cm2. Assume unity injection efficiency, an internal loss of 10cm−1, a confinement factor of 0.1, and only radiative recombination. (a) What is the threshold carrier density in the active region? (b) What is the power out of one cleaved facet per micrometer of width at a current density of 2 kA/cm2?(c) What are the photon and carrier densities at 2 kA/cm2?

A cleaved-facet, DH GaAs laser has an active layer thickness of 0.1 μm, a length of 300μm, and a threshold current density of 1 kA/cm2. Assume unity injection efficiency, an internal loss of 10cm−1, a confinement factor of 0.1, and only radiative recombination. (a) What is the threshold carrier density in the active region? (b) What is the power out of one cleaved facet per micrometer of width at a current density of 2 kA/cm2?(c) What are the photon and carrier densities at 2 kA/cm2?

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Question

1 A cleaved-facet, DH GaAs laser has an active layer thickness of 0.1 μm, a length of 300μm, and a threshold current density of 1 kA/cm2. Assume unity injection efficiency, an internal loss of 10cm−1, a confinement factor of 0.1, and only radiative recombination. (a) What is the threshold carrier density in the active region? (b) What is the power out of one cleaved facet per micrometer of width at a current density of 2 kA/cm2?(c) What are the photon and carrier densities at 2 kA/cm2?

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