A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that XA = 2.0 eV,XB = 1.5 eV, Efa = 2.9 eV,Efb = 2.0 eV, EgA = 1.3 eV, EgB = 2.8 eV (a) Sketch the band diagram for the p-n heterojunction under the thermal equilibrium condition. The vacuum level Хв ХА ECB ECA- EFB EgB EFA EVA EvB Semiconductor A Semiconductor B
A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that XA = 2.0 eV,XB = 1.5 eV, Efa = 2.9 eV,Efb = 2.0 eV, EgA = 1.3 eV, EgB = 2.8 eV (a) Sketch the band diagram for the p-n heterojunction under the thermal equilibrium condition. The vacuum level Хв ХА ECB ECA- EFB EgB EFA EVA EvB Semiconductor A Semiconductor B
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Transcribed Image Text:A p-n heterojunction is formed though Semiconductor A intimately contacting with
Semiconductor B. The energy band diagrams for two semiconductors are shown in
Figure 2 on page 4. It is given that
— 1.3 eV, Egв
= 2.8 eV
1.5 eV, Efa = 2.9 eV, Efb = 2.0 eV,EgA
%3D
%3D
ХА 3 2.0 еV, Хв 3D
(a)
Sketch the band diagram for the p-n heterojunction under the thermal equilibrium
condition.
The vacuum level
Хв
XA
ECB
ECA-
EFB
EFA
EVA
gB
EvB
Semiconductor A
Semiconductor B
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