An intrinsic semiconductor has an energy gap of 0.65 eV and an intrinsic carrier density np2.56-1019 m-3 at 310 K. It is doped with 5.1-1022 m-3 atoms that produce p- type doping. Carrier mobilities in this semiconductor are He=0.48 m2v-1s-1 and ph-0.17 m2v-1s-1. Find the conductivity of this doped semiconductor. Recall that me=9.1*10-31 kg, mp=1.67-10-27 kg. e=1.6*10-19 C, NA-6.022 1023 mor1, kB=1.38 10-23 m² kg s-2 k-1. 987 1/(0-m) 853 1/(0-m) 3917 1/(0-m) 1387 1/(Q-m) 2.662 1/(0-m)
An intrinsic semiconductor has an energy gap of 0.65 eV and an intrinsic carrier density np2.56-1019 m-3 at 310 K. It is doped with 5.1-1022 m-3 atoms that produce p- type doping. Carrier mobilities in this semiconductor are He=0.48 m2v-1s-1 and ph-0.17 m2v-1s-1. Find the conductivity of this doped semiconductor. Recall that me=9.1*10-31 kg, mp=1.67-10-27 kg. e=1.6*10-19 C, NA-6.022 1023 mor1, kB=1.38 10-23 m² kg s-2 k-1. 987 1/(0-m) 853 1/(0-m) 3917 1/(0-m) 1387 1/(Q-m) 2.662 1/(0-m)
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Transcribed Image Text:An intrinsic semiconductor has an energy gap of 0.65 eV and an intrinsic carrier density nF2.56-1019 m-3 at 310 K. It is doped with 5.1-1022 m-3 atoms that produce p-
type doping. Carrier mobilities in this semiconductor are He=0.48 m²v-1s-1 and ph-0.17 m²v-1s-1. Find the conductivity of this doped semiconductor. Recall that
me=9.1*10-31 kg, mp=1.67*10-27 kg, e-1.6*10-19 C, N A-6.022 1023 mol-1, kg-1.38 10-23 m² kg s-2 K-1.
987 1/(2 m)
853 1/(2 m)
3917 1/(0 m)
1387 1/(2 m)
2.662 1/(0-m)
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