(a) A piece of silicon is doped with 5x10'7/cm³ boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 175°C. (b) Calculate the Room-temperature resistance of the silicon piece in part (a), if it has length of 10 µm and cross-section of 10 µm². Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 1013 cm³ boron atoms. What you mention for the contributions of electrons and holes to resistivity of Si in (b) and (c). VS

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(a) A piece of silicon is doped with 5x10/cm³ boron atoms. Find the hole and electron
concentrations at room temperature (20°C) and at 175°C.
(b) Calculate the Room-temperature resistance of the silicon piece in part (a), if it has
length of 10 um and cross-section of 10 µm². Use mobility values from the mobility vs
carrier concentration plot from lecture slides.
(c) Repeat steps (a) and (b) for the Si doped with 1015 cm³ boron atoms.
What you mention for the contributions of electrons and holes to resistivity of Si in (b)
and (c).
Transcribed Image Text:(a) A piece of silicon is doped with 5x10/cm³ boron atoms. Find the hole and electron concentrations at room temperature (20°C) and at 175°C. (b) Calculate the Room-temperature resistance of the silicon piece in part (a), if it has length of 10 um and cross-section of 10 µm². Use mobility values from the mobility vs carrier concentration plot from lecture slides. (c) Repeat steps (a) and (b) for the Si doped with 1015 cm³ boron atoms. What you mention for the contributions of electrons and holes to resistivity of Si in (b) and (c).
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