MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Textbook Question
Chapter 7, Problem 7.72P
In the common−gate circuit in Figure P7.72, the transistor parameters are:
Figure P7.72
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Students have asked these similar questions
7.65 In the circuit in Figure P7.65, the transistor parameters are: B 120,
Ver(on)=0.7 V, VA 100 V, C -I pF, and fr
mine C, and the equivalent Miller capacitance Cy. State any approxima-
tions or assumptions that you make. (b) Find the upper 3 dB frequency and
the midband voltage gain.
-600 MHz. (a) Deter-
+5 V
R= 33 ka
wwHH
Ry=22 k2
4 k2
10
ww
A baseband signal has the spectrum sketched in the first image added below.
The baseband signal modulates a 98 kHz carrier sine wave. Using frequency and amplitude labelling similar to that in Figure 2, sketch the spectrum of the modulated signal using a template added in image 2, for the following modulations:
i-AM with the amplitude of the carrier wave being 20 V
ii-DSBSC
iii-SSB – the lower sideband
iv-SSB – the upper sideband
Q2.
Consider the circuit shown in Figure P7.15. The transistor has parameters
B = 120 and VA
collector-emitter voltage is VCEO = 1.25 V. (a) Determine Rc, (b) find Ico,
and (c) determine the maximum gain.
= ∞. The circuit bandwidth is 800 MHz and the quiescent
Vcc= 2.5 V
RC
CL = 0.08 pF
Figure P7.15
Chapter 7 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
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- 7.65 In the circuit in Figure P7.65, the transistor parameters are: B = 120, VBE(on) = 0.7 V, VA = 100 V, C, = 1 pF, and fr = 600 MHz. (a) Deter- mine C, and the equivalent Miller capacitance Cy. State any approxima- tions or assumptions that you make. (b) Find the upper 3 dB frequency and the midband voltage gain. +5 V Rc-4 k2 R= 33 k2 Ccz =2 AF CCi =1 uF wwwHE Rg = 2 ka 35 k2 R2= 22 ka 4 ks2 ww ww wwarrow_forwardQ5. In the circuit in Figure P7.65, the transistor parameters are: B = 120, VBE (on) = 0.7 V, VA = 100 V, C, = 1 pF, and fr = 600 MHz. (a) Deter- mine C and the equivalent Miller capacitance CM. State any approxima- tions or assumptions that you make. (b) Find the upper 3 dB frequency and the midband voltage gain. +5 V Rc=4 k2 R = 33 k2 HH Cc2 = 2 µF CCi = 1 µF wwH Rs=2 kQ RL = 5 k2 R2 = 22 kO RE= 4 k2 CE= 10 µF Figure P7.65arrow_forwardEXERCISE PROBLEM *Ex 7.13: The transistor in the circuit in Figure 7.60 has parameters B= 125, VBE(on) = 0.7 V, VA = 200 V, C = 24 pF, and C= 3 pF. (a) Calculate the Miller capacitance. (b) Determine the upper 3 dB frequency. (c) Determine the small-signal midband voltage gain. (Ans. (a) CM = 155 pF, (b) fH = 1.21 MHz, (c) A] = 37.3)arrow_forward
- 7.65 In the circuit in Figure P7.65, the transistor parameters are: B = 120, VBE(on) = 0.7 V, VA = 100 V, C, = 1 pF, and fr = 600 MHz. (a) Deter- mine C, and the equivalent Miller capacitance CM. State any approxima- tions or assumptions that you make. (b) Find the upper 3 dB frequency and the midband voltage gain. Rc=D4 k2 R = 33 k2 C =1 uF Cc2 = 2 µF Rg = 2 k2 R = 5 ka R2 = 22 k2 Rg%3D 4 k2 Cg = 10 uF Figure P7.65 wwarrow_forwardThe baseband signal modulates a 98 kHz carrier sine wave. Using frequency and amplitude labelling similar to that in Figure 2, sketch the spectrum of the modulated signal using a template, similar to that in Figure 3, for the following modulations: AM with the amplitude of the carrier wave being 20 V DSBSC SSB – the lower sideband SSB – the upper sidebandarrow_forwardModify this circuit to extend the upper frequency limit to greater than 15 MHz. You may change the topology (i.e. configuration), but not the power supply voltage or collector bias current. The circuit voltage gain must be 46dB +/- 1 dB. Provide simulation results to show AC frequency responses of both circuits on the same plot, and annotate the 3dB upper frequency limit on both traces. Use typical ẞ values from the data sheet for the simulation. You may assume that 1% resistors are available in values below 100. The circuit must adhere to Standard Bias techniques. V4 Rser=0 SINE(0 0.02 10k) AC 1 VCC ୯ V2 +15V Cin1 1μ -VCC VCC R4 Rc1 147k 7k Q3 2N3904 R7 R6 9.09 20.5k Ce1 Re1 1.00k 10p Outarrow_forward
- For an unmodulated carrier of 150 V and a modulated peak value of 230 V. What is the * percent modulation?arrow_forwardQ2. For the scheme shown in Figure Q2, i. Draw the spectrum of the baseband signal (multiplexer output) for the multiplexer. ii. Determine the bandwidth of the baseband signal (multiplexer output) for the multiplexer. i. Determine the minimum transmission bandwidth of the multiplexer. Explain, briefly, the modification needed for the multiplexer in the figure to achieve this bandwidth. 4 kHz cos 10,000xt Basebund signal cos 24,000mt cos 2000mt cos 32,000nt Figure Q2arrow_forward(a) Design the circuit shown in Figure P7.18 such that Ipo = 0.8 mA, VDsQ = 3.2 V, Rin K, = 0.5 mA/V², VTN = 1.2 V, and A = 0. (b) What is the midband volt- age gain? (c) Determine the magnitude of the voltage gain at (i) f = 5 Hz, (ii) f = 14 Hz, and (iii) f = 25 Hz. (d) Sketch the Bode plot of the voltage gain magnitude and phase. 160 k2, and fr 16 Hz. The transistor parameters are ass VDD =9 V Rp R1 Rin 1 O vO Cc Rs = 0.5 k2 R2 Figure P7.18 ww wwarrow_forward
- Question 2 (a) Briefly explain the advantage of the following Amplitude Modulation (AM) type and state ONE (1) application for each AM type: i. Double Sideband Full Carrier (DSBFC) ii. Double Sideband Suppressed Carrier (DSBSC) iii. Single Sideband (SSB). (b) The AM waveform for the modulated signal is illustrated in Figure 1. i. Calculate the percentage of modulation index, m. ii. State the type of the modulated signal. Justify the answer. iii. Write the equation for the modulated signal. iv. Calculate the percentage of power efficiency. 3V -1IV Figure 1arrow_forwardThe parameters of the circuit shown in Figure 1 are: B = 100, VBE = 0.7 V, VT = 26 mV, Cbc =12 pF, Cce= 15 pF and Cbe = 44 pF. Based on the circuit: i) Determine the midband voltage gain, A, = Vo. vi ii) Calculate the low cut-off frequencies caused by C1 and C2. iii) Calculate CE if the cut-off caused by this capacitor is 88 Hz. iv) Based on values in (ii) and (iii), what is the dominant low cut-off frequency? v) Determine the high cut-off frequency. +18V 3.3k2 C2=0.022µF C,=0.1µF V, 20k2 15k2 Vo 1k2 CE 6802 2.73V Vsarrow_forward7-22arrow_forward
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