Don't use ai to answer I will report you answer The energy gap of germanium is 0.68 eV. The electron mobility is 0.364 m²/volts.sec and the hole mobility is0.190 m²/volts.sec. The intrinsic hole concentration at room temperature (300 K) is X.Y x 1019 m-3.(a) Calculate the electrical conductivity of germanium (intrinsic) at room temperature.(b) What temperature increase (relative to room temperature) is necessary to increase its conductivity by50%?XY is the first 2 digits of your student ID number. For instance, if your student number is 2345678, take holeconcentration as 2.3 x 1019 m-3Data: σ =nqu, σ = σ0 exp (-Eg/2kT),q=1.6x10-19 Coulomb, k = 8.62x10-5 eV/K

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Answered: The energy gap of germanium is 0.68 eV.…

Principles of Modern Chemistry

8th Edition

ISBN:9781305079113

Author:David W. Oxtoby, H. Pat Gillis, Laurie J. Butler

Publisher:David W. Oxtoby, H. Pat Gillis, Laurie J. Butler

Chapter22: Inorganic Materials

Section: Chapter Questions

Problem 19P

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At room temperature, monoclinic sulfur has the unit-cell dimensions a = 11.04 Å, b = 10.98 Å, c = 10.92 Å, and B = 96.73°. Each cell contains 48 atoms of sulfur. (a) Explain why it is not necessary to give the values of the angles a and y in this cell. (b) Compute the density of monoclinic sulfur (in g cm¯³).
Radii were reported as follows: Ti4+ = 60 pm; O2‒ = 140 pm. Based on this, tell as much as youcan about the expected structure of TiO2 – provide the hole type for the cation, the cell lattice,and the coordination numbers for both cation and anion.
The density of the classified vibranium steel alloy of captain america is suprosinglylow 1.56g/cm^3. knowing the shape of the shield can be properly approximated to a cylinder of radius of 42,9 cm and height of 5.54nm. how heavy is the shape in kg
In the initial linear section of the stress-strain curve of a metal or alloy. Explain from the point of view of atomic structure?(a) No, the atomic level properties of the material can never be related to the linear section.(b) The elastic zone is influenced by the strength of the bonds between atoms.(c) The stronger the bond, the less rigid and the lower the Young's Modulus of the material tested.(d) The stronger the bond, the less stress is necessary to apply to the material to deform it elastically.
At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?
Most ceramic materials have low thermal conductivities because(a) Electron mobility is strongly restricted due to their strong ionic-covalent bonding.(b) False, in general they are excellent thermal conductors (they are used in ovens).(c) Electron mobility is dependent on T and therefore they are poor conductors at high temperatures.(d) Electron mobility is highly restricted by secondary bonds.
(a) A hypothetical compound MB2 crystallises in the rutile lattice structure. (i) Draw the lattice structure of the unit cell MB2. (ii) Show by calculation that the stoichiometry of the formula is consistent with the structure. (iii) Determine the coordination number of the MB₂ unit cell.
Sketch the band structure of a Li AND a Si crystal. (ii) How would you expect the electrical conductivity in Li AND Si crystals to vary with temperature? (iii) Account for the fact that the conductivity of Si is enhanced by the addition of small amounts of B.
(b) Many structures of ionic compounds have been described in terms of close packing of a large anion, X, with a cation, A, occupying tetrahedral or octahedral holes. (1) In a cubic close packed lattice, how many octahedral holes are there per lattice ion? (ii) What is the formula of a compound based upon a cubic close packed lattice in which of the octahedral holes are filled? (ii) State the coordination numbers and geometries of A and X In the crystal lattice in part (b)(ii) above.
210 250 R Which of the following descriptions correctly describes the silicate glass in the bulb of a pH electrode? a) The silicate glass in the glass membrane has an irregular, amorphous structure. b) The silicate glass in the membrane is highly organized into repeating rings of SiO4 units. c) The glass membrane is highly ordered crystalline silicate glass. d) The hydrated gel regions of the glass are amorphous, whereas the dry glass layer is crystalline If a pH meter obeying the relationship of "E = constant + 0.0592/n* (log A)" in its calibration range, by what factor does the activity of H+ change if the potential difference is 177.5 mV? b) 1000 a) 3 c) 100 d) 0.001
The band gap of gallium phosphide is 2.26 eV, which makes it appropriate for producing yellow LEDs, although the yellow color is rarely useful on its own (think a yellow laser pointer). One can alter the band gap of GaP, changing the emission color to red or green. Propose the ways to produce these two colors by (1) chemical (compositional) and (2) physical (non-compositional) modifications of the material.
Magnesium hydride possesses a rutile lattice. (a) Sketch a unit cell of rutile. (b) What are the coordination numbers and geometries of the Mg and H centres in this structure?

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