The characteristics for a 0.18 µm CMOS process are as follows: NMOS PMOS Unit Veh 450 -450 mV µCox 270 70 µA/V? 0.5 0.5 1/V VpD 1. In this ampifier, we have: VDD = 1.8 V VDD Ip1 = |Ip2| = 20 µA Vs1 = 0.3 V Vs2 = 1.2 V 0.3 V Rs2 VDD Rp1 Ro Rin,closed Vout M2 || RG1 M1 Vesi = |Vcsal = 0,6 V

The characteristics for a 0.18 µm CMOS process are as follows: NMOS PMOS Unit Veh 450 -450 mV µCox 270 70 µA/V? 0.5 0.5 1/V VpD 1. In this ampifier, we have: VDD = 1.8 V VDD Ip1 = |Ip2| = 20 µA Vs1 = 0.3 V Vs2 = 1.2 V 0.3 V Rs2 VDD Rp1 Ro Rin,closed Vout M2 || RG1 M1 Vesi = |Vcsal = 0,6 V

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

The characteristics for a 0.18 µm CMOS process are as follows:
NMOS
PMOS
Unit
Veh
450
-450
mV
µCox
270
70
µA/V?
0.5
0.5
1/V
VpD
1. In this ampifier, we have:
VDD
= 1.8 V
VDD
Ip1 = |Ip2| = 20 µA
Vs1 = 0.3 V
Vs2 = 1.2 V
0.3 V
Rs2
VDD
Rp1
Ro
Rin,closed
Vout
M2
||
RG1
M1
Vesi = |Vcsal = 0,6 V

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