An NMOS transistor has K = 200 µA/V². What %3D is the value of K, if W=60 µm, L=3 µm? If W=10 um, L=0.25 µm? If W=3 µm, %3D L=40 nm? %3D
An NMOS transistor has K = 200 µA/V². What %3D is the value of K, if W=60 µm, L=3 µm? If W=10 um, L=0.25 µm? If W=3 µm, %3D L=40 nm? %3D
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter30: Dc Motors
Section: Chapter Questions
Problem 6RQ: What is CEMF?
Related questions
Question
Text Problems 4.4 and 4.8 for NMOS and Text Problem 4.47 for PMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.
![NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS
transistor.
For all regions,
W
K, = K, I
K = 4,Cx
iG =0
ig =0
(4.25)
Cutoff region:
+
G
ip = 0
for vGS < VTN
(4.26)
-OB UDS
Triode region:
UGS
VDS
ip = K, (vGS - VTN -
for vGs – VTN 2 Ups 20
UpS
(4.27)
NMOS transistor
Saturation region:
Km
(VGs - VTN) (1+ivps)
ip =
2
for vps 2 (VGS – VTN) 2 0
(4.28)
Threshold voltage:
VTN = VTo + Y (VUSB + 2¢F
VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be
20F
(4.29)
fabricated, and VTN 0 for these transistors.
PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS
transistor.
For all regions
W
(4.30)
K, = K'
L
K, = 4,C
ig = 0
ig = 0
Cutoff region:
ip = 0
for VGs 2 VTP
(4.31)
UBS
OB Ups Triode region:
ip = K, VGS-VTP-
VDS
Ups
2
for 0 < |vpsl < |VGS - VTP
(4.32)
PMOS transistor
Saturation region:
Kp
in =
(VGs - VTP) (1 + Alvosl)
for |Ups] 2 |VGS – VTP 20
(4.33)
Threshold voltage:
VTP = VTO -v (VUBS +20F - V 20F)
(4.34)
For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be
fabricated; VTp > 0 for these devices.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1b94d5d1-8249-4b1b-8d70-6007d482e8f0%2Fd2d74a6b-a1c9-4b77-a8a8-e8cc77c7736d%2F965b3pq_processed.png&w=3840&q=75)
Transcribed Image Text:NMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.25) through (4.29) represent the complete model for the i-v behavior of the NMOS
transistor.
For all regions,
W
K, = K, I
K = 4,Cx
iG =0
ig =0
(4.25)
Cutoff region:
+
G
ip = 0
for vGS < VTN
(4.26)
-OB UDS
Triode region:
UGS
VDS
ip = K, (vGS - VTN -
for vGs – VTN 2 Ups 20
UpS
(4.27)
NMOS transistor
Saturation region:
Km
(VGs - VTN) (1+ivps)
ip =
2
for vps 2 (VGS – VTN) 2 0
(4.28)
Threshold voltage:
VTN = VTo + Y (VUSB + 2¢F
VIN > 0 for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be
20F
(4.29)
fabricated, and VTN 0 for these transistors.
PMOS TRANSISTOR MATHEMATICAL MODEL SUMMARY
Equations (4.30) through (4.34) represent the complete model for the i-v behavior of the PMOS
transistor.
For all regions
W
(4.30)
K, = K'
L
K, = 4,C
ig = 0
ig = 0
Cutoff region:
ip = 0
for VGs 2 VTP
(4.31)
UBS
OB Ups Triode region:
ip = K, VGS-VTP-
VDS
Ups
2
for 0 < |vpsl < |VGS - VTP
(4.32)
PMOS transistor
Saturation region:
Kp
in =
(VGs - VTP) (1 + Alvosl)
for |Ups] 2 |VGS – VTP 20
(4.33)
Threshold voltage:
VTP = VTO -v (VUBS +20F - V 20F)
(4.34)
For the enhancement-mode PMOS transistor, Vtp < 0. Depletion-mode PMOS devices can also be
fabricated; VTp > 0 for these devices.
![TABLE 4.6
MOS Transistor Parameters
NMOS DEVICE
PMOS DEVICE
Vro
+0.75 V
-0.75 V
0.75/V
0.5/V
20F
0.6 V
0.6 V
K'
100 µ.A/V2
40 μΑ/V
Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm
4.8. An NMOS transistor has K=200 µA/V?. What
is the value of K, if W=60 µm, L=3 µm?
If W=10 um, L=0.25 um? If W=3 µm,
%3D
%3D
L=40 nm?
%3D](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F1b94d5d1-8249-4b1b-8d70-6007d482e8f0%2Fd2d74a6b-a1c9-4b77-a8a8-e8cc77c7736d%2Fpc1qd3_processed.png&w=3840&q=75)
Transcribed Image Text:TABLE 4.6
MOS Transistor Parameters
NMOS DEVICE
PMOS DEVICE
Vro
+0.75 V
-0.75 V
0.75/V
0.5/V
20F
0.6 V
0.6 V
K'
100 µ.A/V2
40 μΑ/V
Eox =3.9ɛ, and ɛ, = 11.7ɛ, where ɛ, =8.854 x 10-14 F/cm
4.8. An NMOS transistor has K=200 µA/V?. What
is the value of K, if W=60 µm, L=3 µm?
If W=10 um, L=0.25 um? If W=3 µm,
%3D
%3D
L=40 nm?
%3D
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