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5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; (a) Calculate Vị and V2 when a total voltage V is applied across the gate. (b) Calculate E¡ and E, from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Crot-

5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; (a) Calculate Vị and V2 when a total voltage V is applied across the gate. (b) Calculate E¡ and E, from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Crot-

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; di V C2: E2 (a) Calculate V, and V2 when a total voltage V is applied across the gate. (b) Calculate E, and E2 from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Ctot. (d) Show that the total capacitance can be written as; C, C2 Ctot C1 + C2 %3D where, €q A C1 = d1 €2A C1 d2 and (e) The CMOS gate is 8 um wide and 0.8 um long. For an oxide (eox = 3.8) that is 8 nm thick and Si depletion channel (Esi = 11.7) 10 nm deep when 3.3 Volts is applied, what are C, and C2? What is the total energy stored in this gate?
Transcribed Image Text:5. We are given an n-channel CMOS gate that looks like a capacitor with two parallel dielectric layers as shown below; di V C2: E2 (a) Calculate V, and V2 when a total voltage V is applied across the gate. (b) Calculate E, and E2 from V, and V2. (c) Calculate the energy stored by each of the dielectric layers and then use the sum of the two to calculate a Ctot. (d) Show that the total capacitance can be written as; C, C2 Ctot C1 + C2 %3D where, €q A C1 = d1 €2A C1 d2 and (e) The CMOS gate is 8 um wide and 0.8 um long. For an oxide (eox = 3.8) that is 8 nm thick and Si depletion channel (Esi = 11.7) 10 nm deep when 3.3 Volts is applied, what are C, and C2? What is the total energy stored in this gate?
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