tetake question VG1 Answer VDD 3Vdc Bout ↓ M1 Rload Vout CMOSN The n-MOSFET current source in Figure 1 (also known as the current sink) operates with a fixed gate-to-source DC voltage VG1. The MOSFET design parameters are W=30 um and L= 0.5 um. The voltage drop across the load Vout can vary due change of load resistance however the MOSFET always operates in the saturation mode: Vout is greater than the overdrive voltage. Estimate the value of the bias voltage VG1 in Volts required for the current source value of 50 uA. Assume that n-MOSFET is an enhancement-mode device fabricated with the standard process parameters: Vtn = 0.7V, kn' =200 uA/V². Neglect the Early effect on the drain current. Your Answer:
tetake question VG1 Answer VDD 3Vdc Bout ↓ M1 Rload Vout CMOSN The n-MOSFET current source in Figure 1 (also known as the current sink) operates with a fixed gate-to-source DC voltage VG1. The MOSFET design parameters are W=30 um and L= 0.5 um. The voltage drop across the load Vout can vary due change of load resistance however the MOSFET always operates in the saturation mode: Vout is greater than the overdrive voltage. Estimate the value of the bias voltage VG1 in Volts required for the current source value of 50 uA. Assume that n-MOSFET is an enhancement-mode device fabricated with the standard process parameters: Vtn = 0.7V, kn' =200 uA/V². Neglect the Early effect on the drain current. Your Answer:
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Transcribed Image Text:tetake question
VG1
Answer
VDD
3Vdc
Bout
↓
M1
Rload
Vout
CMOSN
The n-MOSFET current source in Figure 1 (also known as the current sink) operates
with a fixed gate-to-source DC voltage VG1. The MOSFET design parameters are
W=30 um and L= 0.5 um. The voltage drop across the load Vout can vary due change
of load resistance however the MOSFET always operates in the saturation mode:
Vout is greater than the overdrive voltage.
Estimate the value of the bias voltage VG1 in Volts required for the current source
value of 50 uA. Assume that n-MOSFET is an enhancement-mode device fabricated
with the standard process parameters: Vtn = 0.7V, kn' =200 uA/V². Neglect the Early
effect on the drain current.
Your Answer:
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