G=0 GO + VGS S 1/47(17) (Vos - Von)² -OD + VDS An NMOS transistor has the following parameters and is being operated in the saturation region: Vtn = 0.6 V and kn = 0.5 mA/V² If VGS = 8 V and W = 0.5 nm, what length is needed to produce a drain current of 27.38 mA?
G=0 GO + VGS S 1/47(17) (Vos - Von)² -OD + VDS An NMOS transistor has the following parameters and is being operated in the saturation region: Vtn = 0.6 V and kn = 0.5 mA/V² If VGS = 8 V and W = 0.5 nm, what length is needed to produce a drain current of 27.38 mA?
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![### Transcription for Educational Website
**NMOS Transistor Operation in Saturation Region**
#### Circuit Diagram Explanation
The image shows the equivalent circuit of an NMOS transistor operating in the saturation region. The key elements are:
- **G (Gate):** The gate of the NMOS transistor, where the gate current \( I_G = 0 \).
- **D (Drain):** The drain terminal, where the current \( I_D \) flows.
- **S (Source):** The source terminal of the transistor.
The circuit includes a dependent current source, represented as:
\[
\frac{k_n'}{2} \left(\frac{W}{L}\right) (V_{GS} - V_{tn})^2
\]
where:
- \( W \) is the width of the transistor.
- \( L \) is the length of the transistor.
- \( V_{GS} \) is the gate-source voltage.
- \( V_{tn} \) is the threshold voltage.
#### Transistor Parameters
The NMOS transistor is characterized by the following parameters:
- \( V_{tn} = 0.6 \, \text{V} \)
- \( k_n' = 0.5 \, \text{mA/V}^2 \)
#### Problem Statement
If the gate-source voltage \( V_{GS} = 8 \, \text{V} \) and the width \( W = 0.5 \, \text{mm} \), determine the required length \( L \) to produce a drain current \( I_D = 27.38 \, \text{mA} \).
For educational purposes, students should apply the formula in the saturation region to find the value of \( L \).](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F254ab4ad-32b3-46a6-a767-6cfb48fa4969%2F11c742ad-821c-4b49-9ee3-72fd2e6a43ec%2F4gmdm8o_processed.jpeg&w=3840&q=75)
Transcribed Image Text:### Transcription for Educational Website
**NMOS Transistor Operation in Saturation Region**
#### Circuit Diagram Explanation
The image shows the equivalent circuit of an NMOS transistor operating in the saturation region. The key elements are:
- **G (Gate):** The gate of the NMOS transistor, where the gate current \( I_G = 0 \).
- **D (Drain):** The drain terminal, where the current \( I_D \) flows.
- **S (Source):** The source terminal of the transistor.
The circuit includes a dependent current source, represented as:
\[
\frac{k_n'}{2} \left(\frac{W}{L}\right) (V_{GS} - V_{tn})^2
\]
where:
- \( W \) is the width of the transistor.
- \( L \) is the length of the transistor.
- \( V_{GS} \) is the gate-source voltage.
- \( V_{tn} \) is the threshold voltage.
#### Transistor Parameters
The NMOS transistor is characterized by the following parameters:
- \( V_{tn} = 0.6 \, \text{V} \)
- \( k_n' = 0.5 \, \text{mA/V}^2 \)
#### Problem Statement
If the gate-source voltage \( V_{GS} = 8 \, \text{V} \) and the width \( W = 0.5 \, \text{mm} \), determine the required length \( L \) to produce a drain current \( I_D = 27.38 \, \text{mA} \).
For educational purposes, students should apply the formula in the saturation region to find the value of \( L \).
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