2.4. To be used as a current mirror, transistors should be in saturation; however being in saturation may not necessarily mean that they can be used as a current mirror; Explain this phenomenon conceptually for the PMOS and NMOS gate-drain connected transistors shown below (a) PMOS (b) NMOS
2.4. To be used as a current mirror, transistors should be in saturation; however being in saturation may not necessarily mean that they can be used as a current mirror; Explain this phenomenon conceptually for the PMOS and NMOS gate-drain connected transistors shown below (a) PMOS (b) NMOS
Introductory Circuit Analysis (13th Edition)
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Transcribed Image Text:### Understanding Transistors in Current Mirrors
**2.4. Current Mirror Saturation in PMOS and NMOS Transistors**
To be used effectively as a current mirror, transistors should be in saturation. However, being in saturation does not inherently mean they function as a current mirror. We'll explore this concept with PMOS and NMOS gate-drain connected transistors.
#### Transistor Diagrams
- **(a) PMOS Transistor:**
- **VDD**: The positive supply voltage.
- **S**: Source terminal, connected to the current source.
- **G**: Gate terminal, linked directly to the base.
- **B**: Base terminal, connected to the gate.
- **D**: Drain terminal, connected internally to the gate.
- **(b) NMOS Transistor:**
- **D**: Drain terminal, connected internally to the gate.
- **G**: Gate terminal, linked directly to the drain.
- **S**: Source terminal, connected to the current source.
- **B**: Base terminal, tied to the source.
### Explanation
When transistors are in saturation, they have the potential to operate as a current mirror by copying current from one branch to another. However, merely being in saturation is not sufficient—proper configuration and connections are necessary to ensure accuracy and functionality as a current mirror. This involves careful management of gate-to-source voltage and the maintenance of minimal channel-length modulation effects.
Understanding these schematic configurations allows for the exploration of nuances in transistor behavior essential for advanced electronic circuit design.
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