4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (Vg) increasing in linear steps (e.g. Vg = 1 v, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lesat) occurs for each curve. Give this drain voltage (Ve) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.

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4. Sketch typical output characteristics for an enhancement mode long-
channel n-type MOSFET. Show the gate voltage (V2) increasing in linear
steps (e.g. Vg = 1 V, 2 V, 3 V, 4 V). Indicate on the characteristics where
the onset of the saturated drain current (lasat) occurs for each curve.
Give this drain voltage (Va) in terms of threshold voltage (V:) and Vg.
5. Show the effect of channel length modulation on the curves in part (4).
Explain why channel length modulation occurs and why it is more
prominent in short gate-length devices than in long gate-length devices.
Transcribed Image Text:4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (V2) increasing in linear steps (e.g. Vg = 1 V, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lasat) occurs for each curve. Give this drain voltage (Va) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.
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