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Fill in the empty cells within the table below with increase (†), decrease (↓), or no change (→) for a MOSFET device. (Consider NMOS for simplicity)

Fill in the empty cells within the table below with increase (†), decrease (↓), or no change (→) for a MOSFET device. (Consider NMOS for simplicity)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Symbol EG Ne Ny n₁ Er Si Er,SiO2 To X Value 1.12 eV 2.8 x 1019 cm-3 1.04 x 101⁹ cm-3 10¹0 cm-3 11.8 3.9 10-6 s 4.01 eV Esi Eger,Si 10-12 F/cm Properties of silicon (Si at 300K). Mobility (cm²/V-s) 1600 1400 1200 1000 800 600 400 200 0 1014 (a) 1020 1018 1016 1014 1012 1010 1016 1017 10 N₂ + N₂ (ions/cm³) Intrinsic carrier concentration vs. temperature 10⁰ 104 10⁰ 10² Symbol q kT/q KTIn(10) Eo KB h 1015 mo 1 eV Ge Carrier mobility in silicon 0.026V 60 meV at 300K 8.85 × 10-¹4 F/cm 8.62-105 eV/K or 1.38×10-23 J/K GaAs Value 1.6 x 10-19 C Physical constants www 4.14-10-15 eV-s 9.1-10-31 kg 1.6 x 10-19 J GaP Ha 1019 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 TEMPERATURE IN K
Transcribed Image Text:Symbol EG Ne Ny n₁ Er Si Er,SiO2 To X Value 1.12 eV 2.8 x 1019 cm-3 1.04 x 101⁹ cm-3 10¹0 cm-3 11.8 3.9 10-6 s 4.01 eV Esi Eger,Si 10-12 F/cm Properties of silicon (Si at 300K). Mobility (cm²/V-s) 1600 1400 1200 1000 800 600 400 200 0 1014 (a) 1020 1018 1016 1014 1012 1010 1016 1017 10 N₂ + N₂ (ions/cm³) Intrinsic carrier concentration vs. temperature 10⁰ 104 10⁰ 10² Symbol q kT/q KTIn(10) Eo KB h 1015 mo 1 eV Ge Carrier mobility in silicon 0.026V 60 meV at 300K 8.85 × 10-¹4 F/cm 8.62-105 eV/K or 1.38×10-23 J/K GaAs Value 1.6 x 10-19 C Physical constants www 4.14-10-15 eV-s 9.1-10-31 kg 1.6 x 10-19 J GaP Ha 1019 10 1 0 200 400 600 800 1000 1200 1400 1600 1800 TEMPERATURE IN K
Fill in the empty cells within the table below with increase (1), decrease (1), or no change (→) for a MOSFET device. (Consider NMOS for simplicity) V₁ gm Substhreshold Current Drain Induced Barrier Lowering Increase channel dopant Decrease Oxide concentration thickness Increase Carrier mobility Decrease Channel length
Transcribed Image Text:Fill in the empty cells within the table below with increase (1), decrease (1), or no change (→) for a MOSFET device. (Consider NMOS for simplicity) V₁ gm Substhreshold Current Drain Induced Barrier Lowering Increase channel dopant Decrease Oxide concentration thickness Increase Carrier mobility Decrease Channel length
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