Question 5 ZnSe is a direct gap semiconductor with a band gap of 2.87 eV. Calculate the binding energy and Bohr radius of a free excitons, and also the wavelength of the free excitonic transition. The electron and hole effective masses and dielectric constant are m; = 0.28m,, m; = 0.49m.. and €,= 9.6, respectively.
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- Q6. Can we operate normal PN junction diode in breakdown region for longer duration? Give reasonH:47)Q: A. Design a class AB amplifier stage to(40) load speaker from £25V supplies; calculate the input power, output power, power handled by each transistor, and the circuit efficiency for an input voltage of (12V) r.m.s.
- 1. In semiconductors, how is conductivityaffected by impurities (doping) and temperature?2. Phosphorous is added to high purity silicon to produce a1023 ?3 charges carrier concentration at room temperature. What is this type of material, n or p?3. Calculate the conductivity of this material at room temperature, assuming that the mobilities of electrons andof the gaps are the same as for the intrinsic material?e = 0.14 and ?h = 0.048 ?/ V s.? = 2240(Ω − ?)-1. P why?Semiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.4. If a kind of particles obeys the following dispersion -Dpa, what is the density of states (three dimensions)?
- Needs Complete solution with 100 % accuracy.A silicon layer measuring 1 micrometers thick contains an electron. if a 1D quantum well with infinite walls can accurately describe the semiconductor. Assume that the silicon's electron's effective mass is 0.26 x. (rest mass of electron) a. Determine the material's three lowest energy levels. b. What is the corresponding electron velocity at the lowest energy level if the energy can be understood as the kinetic energy of the electron?Clear my CHOICE A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector doped with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: OA. P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 OE. P = 2.25e17 /cm^3 Clear my choice ol muantum efficiency (the radiative recombination efficiency) n