Question 5 ZnSe is a direct gap semiconductor with a band gap of 2.87 eV. Calculate the binding energy and Bohr radius of a free excitons, and also the wavelength of the free excitonic transition. The electron and hole effective masses and dielectric constant are m; = 0.28m,, m; = 0.49m.. and €,= 9.6, respectively.
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A: Given: Sample length=100 μm N=1020 cm-3 T=1 μs voltage applied=10 v
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Q: Solve for Vo1, Vo2, & I (diodes are silicon) Vo1 Vo2 1k 0.47K 20V Ge
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Q: A silicon sample is doped with Nd = 1017cm-3 of As atoms.  
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Q: 30. The equation: H¸(T) = H¸(0) × [1 − (−)²] - '] describes with a good approximation the dependence…
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Q: Which of the following statements about drift and diffusion is FALSE?
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Q: why Seebeck coefficient has opposite signs for n and p type semiconductors. What are the materials…
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Q: rmal PN junction diode in breakdown region for longer duration? Give 1
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Q: What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2…
A: given, v=0.54 v v(t)=0.02585 v Junction area=100μm2=100×10-8cm2Acceptor concentration…
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