Ion electron clouds 100-200 Kev Silicon wafer The ion distribution into the silicon can be approximated to first order by the Gaussian form as: 2 1/x-Rp) ARp Nion (x): = Nye a) Assuming the above equation holds good for defining the doping profile of the penetrated ions, discuss the impact of enhancing the straggle to i)'infinity' and ii) "zero' on the penetrated ions to the depth of 'x'. Also discuss upon which factors Non (x) shall depend. b) Defend or justify otherwise whether this doping process is better than the conventional chemical doping process or not, with respect to certain attributes.

Ion electron clouds 100-200 Kev Silicon wafer The ion distribution into the silicon can be approximated to first order by the Gaussian form as: 2 1/x-Rp) ARp Nion (x): = Nye a) Assuming the above equation holds good for defining the doping profile of the penetrated ions, discuss the impact of enhancing the straggle to i)'infinity' and ii) "zero' on the penetrated ions to the depth of 'x'. Also discuss upon which factors Non (x) shall depend. b) Defend or justify otherwise whether this doping process is better than the conventional chemical doping process or not, with respect to certain attributes.