Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum quantum efficiency. You are given the following for your design: 1. 17.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of Gads at the incident photon energy is ae-I× 10 Cm 3. Neglect the diffusion current and the thicknesses of the nt and pt regions. What is the maximum detector efficiency you will obtain from your design? a. 52.15 % O b. 57.75 % Oc. 26.50 % O d. 10.90 % O e. 66.00 %
Fou are given a GAs semiconductor sample and asked to design a PIN photo-detector for macimum quantum efficiency. You are given the following for your design: 1. 17.5 % of the incident photons to be detected are reflected back from the detector surface. 2. The absorption coefficient of Gads at the incident photon energy is ae-I× 10 Cm 3. Neglect the diffusion current and the thicknesses of the nt and pt regions. What is the maximum detector efficiency you will obtain from your design? a. 52.15 % O b. 57.75 % Oc. 26.50 % O d. 10.90 % O e. 66.00 %
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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