A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552
A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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![A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is applied
across the detector length, at 300 K the detector gain at the applied voltage will be:
O a. 515.5
O b. 1056
O c. 0
O d. 680.0
O e. 0.3552](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ffb4bf475-c99f-44b9-a290-96d284775105%2F609c030e-fbd6-42fe-b527-e361f8bf7998%2Faxi4on6_processed.png&w=3840&q=75)
Transcribed Image Text:A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is applied
across the detector length, at 300 K the detector gain at the applied voltage will be:
O a. 515.5
O b. 1056
O c. 0
O d. 680.0
O e. 0.3552
![Prof. O M Khreis
Мay 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 × 10-34
9.11 x 10-31 Kg
h
J.s
Si
Ge
GaAs
m.
E, (eV)
ni (ст-3)
Hn (ст?/V — s)
Mp (ст? /V — s)
Ne (cm-3)
Ny (cm-3)
m/m.
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
F/m
Eo
8.85 x 10
-12
450
1900
400
1.05 x 10-34
8.6 x 10-5 eV/K
J
1.04 x 1019 | 4.45 × 1017
6 × 1018
2.78 x 1019
K
9.84 × 1018
7.72 × 1018
KT/q
26 mV (T 3 300 К)
26 meV (T = 300 K)
0.082
0.98
0.067
KT
mi/m.
Er (F/m)
0.28
0.49
0.45
3 x 10° m/s
11.7
16
13.1
Nair = 1
nGaAs =
3.66
%3D
Some useful relations
EgALGa1–2As(x) = 1.424 + 1.247x
EgIn,Ga1-,As(x) = 0.36 + 1.064x
1 eV = 1.602 × 10¬19 J
1 KG = 1 × 10-5 wb/cm²](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ffb4bf475-c99f-44b9-a290-96d284775105%2F609c030e-fbd6-42fe-b527-e361f8bf7998%2Fe2rwmw_processed.png&w=3840&q=75)
Transcribed Image Text:Prof. O M Khreis
Мay 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 × 10-34
9.11 x 10-31 Kg
h
J.s
Si
Ge
GaAs
m.
E, (eV)
ni (ст-3)
Hn (ст?/V — s)
Mp (ст? /V — s)
Ne (cm-3)
Ny (cm-3)
m/m.
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
F/m
Eo
8.85 x 10
-12
450
1900
400
1.05 x 10-34
8.6 x 10-5 eV/K
J
1.04 x 1019 | 4.45 × 1017
6 × 1018
2.78 x 1019
K
9.84 × 1018
7.72 × 1018
KT/q
26 mV (T 3 300 К)
26 meV (T = 300 K)
0.082
0.98
0.067
KT
mi/m.
Er (F/m)
0.28
0.49
0.45
3 x 10° m/s
11.7
16
13.1
Nair = 1
nGaAs =
3.66
%3D
Some useful relations
EgALGa1–2As(x) = 1.424 + 1.247x
EgIn,Ga1-,As(x) = 0.36 + 1.064x
1 eV = 1.602 × 10¬19 J
1 KG = 1 × 10-5 wb/cm²
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