A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is appliedacross the detector length, at 300 K the detector gain at the applied voltage will be:O a. 515.5O b. 1056O c. 0O d. 680.0O e. 0.3552 Prof. O M KhreisМay 2, 2020: Si, Ge, GaAs Parameters and Universal ConstantsUNIVERSAL CONSTANTSPropertiesSEMICONDUCTOR6.63 × 10-349.11 x 10-31 KghJ.sSiGeGaAsm.E, (eV)ni (ст-3)Hn (ст?/V — s)Mp (ст? /V — s)Ne (cm-3)Ny (cm-3)m/m.1.10.671.423.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19 C150039008500F/mEo8.85 x 10-1245019004001.05 x 10-348.6 x 10-5 eV/KJ1.04 x 1019 | 4.45 × 10176 × 10182.78 x 1019K9.84 × 10187.72 × 1018KT/q26 mV (T 3 300 К)26 meV (T = 300 K)0.0820.980.067KTmi/m.Er (F/m)0.280.490.453 x 10° m/s11.71613.1Nair = 1nGaAs =3.66%3DSome useful relationsEgALGa1–2As(x) = 1.424 + 1.247xEgIn,Ga1-,As(x) = 0.36 + 1.064x1 eV = 1.602 × 10¬19 J1 KG = 1 × 10-5 wb/cm²

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A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552

A simple Ge n-i-n photo-detector sample has a length of L= 30 µm and a hole lifetime of t, = 0.4 µs. If a voltage of 2 V is applied across the detector length, at 300 K the detector gain at the applied voltage will be: O a. 515.5 O b. 1056 О с.0 O d. 680.0 О е. 0.3552

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Question

A simple Ge n-i-n photo-detector sample has a length of L = 30 µm and a hole lifetime of t, = 0.4 us. If a voltage of 2 V is applied
across the detector length, at 300 K the detector gain at the applied voltage will be:
O a. 515.5
O b. 1056
O c. 0
O d. 680.0
O e. 0.3552

Prof. O M Khreis
Мay 2, 2020
: Si, Ge, GaAs Parameters and Universal Constants
UNIVERSAL CONSTANTS
Properties
SEMICONDUCTOR
6.63 × 10-34
9.11 x 10-31 Kg
h
J.s
Si
Ge
GaAs
m.
E, (eV)
ni (ст-3)
Hn (ст?/V — s)
Mp (ст? /V — s)
Ne (cm-3)
Ny (cm-3)
m/m.
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
1500
3900
8500
F/m
Eo
8.85 x 10
-12
450
1900
400
1.05 x 10-34
8.6 x 10-5 eV/K
J
1.04 x 1019 | 4.45 × 1017
6 × 1018
2.78 x 1019
K
9.84 × 1018
7.72 × 1018
KT/q
26 mV (T 3 300 К)
26 meV (T = 300 K)
0.082
0.98
0.067
KT
mi/m.
Er (F/m)
0.28
0.49
0.45
3 x 10° m/s
11.7
16
13.1
Nair = 1
nGaAs =
3.66
%3D
Some useful relations
EgALGa1–2As(x) = 1.424 + 1.247x
EgIn,Ga1-,As(x) = 0.36 + 1.064x
1 eV = 1.602 × 10¬19 J
1 KG = 1 × 10-5 wb/cm²

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