Why the collector of BJT is made ?bigger than emitter
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Why the collector of BJT is made * ?bigger than emitter to inject more electrons to the O emitter to reduce the leakage current O to attract high number of electrons () to increase the leakage current O In an n-channel JFET, when applied VGS =0V and VDS > VP (pinch-off voltage) the drain current is O O >
Transcribed Image Text:Why the collector of BJT is made
?bigger than emitter
to inject more electrons to the
emitter
to reduce the leakage current O
to attract high number of electrons
to increase the leakage current O
In an n-channel JFET, when applied
VGS = OV and VDS > VP (pinch-off
voltage) the drain current is
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