Clear my CHOICEA laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector dopedwith Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state andassuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the totalconcentration of holes (p) in the valence band.Select one:OA. P = 2.01e12 /cm^3OB. P = 2.25e15 /cm^3• C.P = 2.25e16 /cm^3OD. P = 2.25e18 /cm^3OE. P = 2.25e17 /cm^3Clear my choiceol muantum efficiency (the radiative recombination efficiency) n 4G75% DI 9:07SiGeGaAsprope.Prof. O M KhrcisMay 2, 2020: Si, Ge, Ga As Parameters and Universal ConstantsUNIVERSAL CONSTANTS6.63 x 10-34 J.s9.11 x 10-31 KgPropertiesSEMICONDUCTORhSiGeGaAsE, (eV)n, (cm-3)Hn (cm? /V – s)Pp (cm? /V – s)N. (cm-3)N, (em-3)m:/m.m; /m.E, (F/m)1.10.671.423.141.5 x 10102.3 x 10131.8 x 1061.602 x 10-19 C8.85 x 10-12 F/m1.05 x 10-34 J – 88.6 x 10-5 eV/K15003900850045019004002.78 x 1019| 1.04 x 1019 | 4.45 x 10179.84 x 1018K6 x 10187.72 x 1018KT/q26 mV (T = 300 K)0.0820.980.067КТ26 meV (T = 300 K)0.280.490.453 x 10° m/s11.71613.1Nair = 1NGaAs = 3.66Some useful relationsEgAl, Ga-rAs(r) = 1.424 + 1.247xEgin, Ga-1Ae(x) = 0.36 + 1.064r1 eV = 1.602 x 10-19 J1 KG = 1 x 10-5 Wb/cm?1...

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