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A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo- with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: O A.P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 E. P = 2.25e17 /cm^3 Clear my choice diotitra recomhination efficiency) n

A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo- with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: O A.P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 E. P = 2.25e17 /cm^3 Clear my choice diotitra recomhination efficiency) n

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Clear my CHOICE A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector doped with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: OA. P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 OE. P = 2.25e17 /cm^3 Clear my choice ol muantum efficiency (the radiative recombination efficiency) n
Transcribed Image Text:Clear my CHOICE A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector doped with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: OA. P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 OE. P = 2.25e17 /cm^3 Clear my choice ol muantum efficiency (the radiative recombination efficiency) n
4G 75% DI 9:07 SiGeGaAsprope. Prof. O M Khrcis May 2, 2020 : Si, Ge, Ga As Parameters and Universal Constants UNIVERSAL CONSTANTS 6.63 x 10-34 J.s 9.11 x 10-31 Kg Properties SEMICONDUCTOR h Si Ge GaAs E, (eV) n, (cm-3) Hn (cm? /V – s) Pp (cm? /V – s) N. (cm-3) N, (em-3) m:/m. m; /m. E, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10-12 F/m 1.05 x 10-34 J – 8 8.6 x 10-5 eV/K 1500 3900 8500 450 1900 400 2.78 x 1019| 1.04 x 1019 | 4.45 x 1017 9.84 x 1018 K 6 x 1018 7.72 x 1018 KT/q 26 mV (T = 300 K) 0.082 0.98 0.067 КТ 26 meV (T = 300 K) 0.28 0.49 0.45 3 x 10° m/s 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAl, Ga-rAs(r) = 1.424 + 1.247x Egin, Ga-1Ae(x) = 0.36 + 1.064r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm? 1 ...
Transcribed Image Text:4G 75% DI 9:07 SiGeGaAsprope. Prof. O M Khrcis May 2, 2020 : Si, Ge, Ga As Parameters and Universal Constants UNIVERSAL CONSTANTS 6.63 x 10-34 J.s 9.11 x 10-31 Kg Properties SEMICONDUCTOR h Si Ge GaAs E, (eV) n, (cm-3) Hn (cm? /V – s) Pp (cm? /V – s) N. (cm-3) N, (em-3) m:/m. m; /m. E, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10-12 F/m 1.05 x 10-34 J – 8 8.6 x 10-5 eV/K 1500 3900 8500 450 1900 400 2.78 x 1019| 1.04 x 1019 | 4.45 x 1017 9.84 x 1018 K 6 x 1018 7.72 x 1018 KT/q 26 mV (T = 300 K) 0.082 0.98 0.067 КТ 26 meV (T = 300 K) 0.28 0.49 0.45 3 x 10° m/s 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAl, Ga-rAs(r) = 1.424 + 1.247x Egin, Ga-1Ae(x) = 0.36 + 1.064r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm? 1 ...
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