A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo- with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: O A.P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 E. P = 2.25e17 /cm^3 Clear my choice diotitra recomhination efficiency) n
A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo- with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: O A.P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 E. P = 2.25e17 /cm^3 Clear my choice diotitra recomhination efficiency) n
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Transcribed Image Text:Clear my CHOICE
A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector doped
with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and
assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total
concentration of holes (p) in the valence band.
Select one:
OA. P = 2.01e12 /cm^3
OB. P = 2.25e15 /cm^3
• C.P = 2.25e16 /cm^3
OD. P = 2.25e18 /cm^3
OE. P = 2.25e17 /cm^3
Clear my choice
ol muantum efficiency (the radiative recombination efficiency) n

Transcribed Image Text:4G
75% DI 9:07
SiGeGaAsprope.
Prof. O M Khrcis
May 2, 2020
: Si, Ge, Ga As Parameters and Universal Constants
UNIVERSAL CONSTANTS
6.63 x 10-34 J.s
9.11 x 10-31 Kg
Properties
SEMICONDUCTOR
h
Si
Ge
GaAs
E, (eV)
n, (cm-3)
Hn (cm? /V – s)
Pp (cm? /V – s)
N. (cm-3)
N, (em-3)
m:/m.
m; /m.
E, (F/m)
1.1
0.67
1.42
3.14
1.5 x 1010
2.3 x 1013
1.8 x 106
1.602 x 10-19 C
8.85 x 10-12 F/m
1.05 x 10-34 J – 8
8.6 x 10-5 eV/K
1500
3900
8500
450
1900
400
2.78 x 1019| 1.04 x 1019 | 4.45 x 1017
9.84 x 1018
K
6 x 1018
7.72 x 1018
KT/q
26 mV (T = 300 K)
0.082
0.98
0.067
КТ
26 meV (T = 300 K)
0.28
0.49
0.45
3 x 10° m/s
11.7
16
13.1
Nair = 1
NGaAs = 3.66
Some useful relations
EgAl, Ga-rAs(r) = 1.424 + 1.247x
Egin, Ga-1Ae(x) = 0.36 + 1.064r
1 eV = 1.602 x 10-19 J
1 KG = 1 x 10-5 Wb/cm?
1
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