3. What is the qualitative difference between the absorption spectra of a direct gap and that of an indirect gap semiconductor?

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3. What is the qualitative difference between the absorption spectra of a direct gap and
that of an indirect gap semiconductor?
Transcribed Image Text:3. What is the qualitative difference between the absorption spectra of a direct gap and that of an indirect gap semiconductor?
Element
III-V
IV-IV
II-VI
Material
C (diamond)
Ge
Si
Sn (gray)
GaAs
InAs
InSb
GaP
GaN
InN
InP
x-Sic
ZnO n-type
Cd Se
ZnS
PbS
IV-VI
"Longitudinal effective mass.
Transverse effective mass.
Light-hole effective mass.
"Heavy-hole effective mass.
Transition
I
I
PARALDDD
I
I
D
D
D
I
Gap energy
E₂[eV]
0K 300 K
5.48 5.47
0.74
0.66
1.17
0.09
1.52
0.42
0.23
2.34
3.50
1.42
3.03
3.42
1.85
3.84
0.28
1.12
Room-temp.
conductivity
0.17
2.26
3.36
0.7
1.35
2.99
3.35
1.70
3.68
0.41
22-m
10-12
2.2
9 x 10-4
0.08
1.42
0.36 10*
10
10-6
Transitions: D = direct
I = indirect
Mobility of
electrons
[m²
He
0.18
0.39
0.15
0.14
0.85
3.30
8.00
0.01
0.04
0.46
0.04
0.02
0.08
0.02
0.06
Mobility of
holes
m²
0.12
0.19
0.045
0.12
0.04
0.046
0.125
0.007
0.01
0.015
0.005
0.018
0.0005
0.07
Work function
(photoelectric)
o [cv]
4.8
4.6
3.6
4.9
5.3
Effective mass
ratio at 4 K
m²
mo
0.2
1.64*
0.08
0.98*
0.19b
0.067
0.023
0.014
0.82
0.19
m
mo
0.25
0.04€
0.28
0.16
0.49d
0.3⁰
0.082
0.40
0.40
0.60
0.60
0.077
0.60
0.27
0.13 0.45
0.40
0.25
0.64
1.00
0.25
Transcribed Image Text:Element III-V IV-IV II-VI Material C (diamond) Ge Si Sn (gray) GaAs InAs InSb GaP GaN InN InP x-Sic ZnO n-type Cd Se ZnS PbS IV-VI "Longitudinal effective mass. Transverse effective mass. Light-hole effective mass. "Heavy-hole effective mass. Transition I I PARALDDD I I D D D I Gap energy E₂[eV] 0K 300 K 5.48 5.47 0.74 0.66 1.17 0.09 1.52 0.42 0.23 2.34 3.50 1.42 3.03 3.42 1.85 3.84 0.28 1.12 Room-temp. conductivity 0.17 2.26 3.36 0.7 1.35 2.99 3.35 1.70 3.68 0.41 22-m 10-12 2.2 9 x 10-4 0.08 1.42 0.36 10* 10 10-6 Transitions: D = direct I = indirect Mobility of electrons [m² He 0.18 0.39 0.15 0.14 0.85 3.30 8.00 0.01 0.04 0.46 0.04 0.02 0.08 0.02 0.06 Mobility of holes m² 0.12 0.19 0.045 0.12 0.04 0.046 0.125 0.007 0.01 0.015 0.005 0.018 0.0005 0.07 Work function (photoelectric) o [cv] 4.8 4.6 3.6 4.9 5.3 Effective mass ratio at 4 K m² mo 0.2 1.64* 0.08 0.98* 0.19b 0.067 0.023 0.014 0.82 0.19 m mo 0.25 0.04€ 0.28 0.16 0.49d 0.3⁰ 0.082 0.40 0.40 0.60 0.60 0.077 0.60 0.27 0.13 0.45 0.40 0.25 0.64 1.00 0.25
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