I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature.Calculate the electric conductivity (o) that produced from the minority carriers, givenni = 2.5 x 1013 /m³, He =:38 m2 /Vs , Hp = 18 m²/VsII. Find electron and hole concentration for Si sample at 300k when its doping with 1016Gallium atom / m3 which make E,= 0.935 ev. Given N. = N,, = 2.8 x 1025states/m3.

Here given the Ge sample has electrical resistivity 0.3 ohm.cm. The minority carrriers is 2.5 × 10¹³…

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m2/Vs %3D

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature. Calculate the electric conductivity (o) that produced from the minority carriers, given n; = 2.5 x 1013 /m³, He = 38 m2/Vs, Hp 18 m2/Vs %3D

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Question

I. The Ge sample (p-type) has been electric resistivity 0.3 2.cm at room temperature.
Calculate the electric conductivity (o) that produced from the minority carriers, given
ni = 2.5 x 1013 /m³, He =:
38 m2 /Vs , Hp = 18 m²/Vs
II. Find electron and hole concentration for Si sample at 300k when its doping with 1016
Gallium atom / m3 which make E,
= 0.935 ev. Given N. = N,, = 2.8 x 1025
states/m3.

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