For an electrode at which, Y* ion deposited fromaqueous solution in presence of excess differentelectrolyte .The diffusion layer thickness( 6) is0.002 cm , and the limiting current density ( Iim) =%3D6.30 x 103 A/cm² . If the diffusion coefficient of ion(D*) = 2.16x106 cm²/s .Calculate the maximum rate of arrival of Y+ ions bydiffusion in unit of mol/cm? s.[Consider the concentration of Y* = 0.04 M ]%3Dа. 4.3х102O b.4.3x10-8Ос. 4.3х104d. 4.3x105Ое. 4.3х1011

Diffusion layer thickness: Because of concentration approaches asymptotically the diffusion layer…

For an electrode at which, Y* ion deposited from aqueous solution in presence of excess different electrolyte .The diffusion layer thickness( 6) is 0.002 cm , and the limiting current density ( Iim) = 6.30 x 103 A/cm2 . If the diffusion coefficient of ion (D*) = 2.16x10-6 cm²/s . Calculate the maximum rate of arrival of Y+ ions by diffusion in unit of mol/cm? s. [Consider the concentration of Y+ = 0.04 M ] a. 4.3x102 b. 4.3x10-8 c. 4.3x104 d. 4.3x10-5 e. 4.3x10-11 е.

For an electrode at which, Y* ion deposited from aqueous solution in presence of excess different electrolyte .The diffusion layer thickness( 6) is 0.002 cm , and the limiting current density ( Iim) = 6.30 x 103 A/cm2 . If the diffusion coefficient of ion (D*) = 2.16x10-6 cm²/s . Calculate the maximum rate of arrival of Y+ ions by diffusion in unit of mol/cm? s. [Consider the concentration of Y+ = 0.04 M ] a. 4.3x102 b. 4.3x10-8 c. 4.3x104 d. 4.3x10-5 e. 4.3x10-11 е.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 × 10¹6 cm-3 and electronic charge q = 1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm², is Drift velocity (cm/s) 10 linear constant 5x10 Electric field (V/cm)
EE1- Electronic physic – HW3 Q: P. type semiconductor with length (= 5mm), the cross-section area of (A= 0.5 mm), and resistance (R-2502). Calculate the exact number of the majority (p,) and the minority (n,) carriers. Also, calculate the number of acceptor atoms (NA) if the intrinsic carrier (n = 2x10"/m"). Given the mobility for the electrons (ue-0.4m2/V.s) and for the holes (u-0.2m?/V.s)
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm2, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m2). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2x1020 electrons/m3. Given the mobility for the electrons (ue-0.4m2/V.s) and for the holes (0.2m2/V.s) O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22 O 123e22, 3.2e16, 1.25e22 Ina semiconductor it is ohserved that 0 75 of the current is carried by 2 points
Can you explain this question Thank you
Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T= 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-³ and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for acceptors is 0.0345 eV. The fraction of total holes that are still in the acceptor states?
Q: P. type semiconductor with length (= 5mm), the cross-section area of (A= 0.5 mm?), and resistance (R=2502). Calculate the exact number of the majority (pp) and the minority (np) carriers. Also, calculate the number of acceptor atoms (NA) if the intrinsic carrier (n = 2x1020/m²). Given the mobility for the electrons (ue-0.4m?/V.s) and for the holes (u-0.2m2/V.s)
In diodes, the space charge due to immobile ions in the depletion region establishes an electric field that opposes carrier diffusion. A) True B False Semiconductor devices with millions of transistors in a single package are called a/an Blank 1 circuits. Blank 1 Add your answer When a potential difference is applied across n-type material, the holes flow from positive to negative. A) True B False
i. A silicon sample is uniformly doped p-type with NA=10/cm. At T=0 K, what are the equilibrium electron and hole concentrations? Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. ii. Hole Flow (Diffusion) Hole Flow (Drift) E(x) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) n(x) p(x) ii. An n-type semiconductor sample is continuously and uniformly excited (optically) at low level. Start from the balance between the generation and recombination and find the expression for the steady state excess hole concentration in the sample in terms of goo and tp. Do not derive this expression using the continuity or diffusion equations. Show complete work.
A cylindrical piece of Ge having diameter of 3 mm, is doped with 1015 atom/ m3 of arsenic (As). What length of this Ge would be required to give a resistance of 10KO if the electron mobility in Ge is 0.38 m² N.sec.
For a P-type semiconductor with length of 55mm, the cross-section area of 0.55mm?, and resistance of 2502. Calculate the exact number of the majority and the minority carriers (in electrons/m?). Also, calculate the number of acceptor atoms (in atoms/m') if the intrinsic carrier is 2×1020 electrons/m. Given the mobility for the electrons (u-0.4m?/V.s) and for the holes (H-0.2m/V.s) 1.23e22, 3.2e16, 1.25e22 O 1.25e22, 3.2e18, 1.23e22 O 1.23e22, 3e18, 1.23e22 O 1.25e22, 3.2e18, 1.25e22
0) A silicon sample is doped with one atom of acceptor for every 10 atoms of silicon. Find the electron and hole concentration ,and the total conductivity. What is the type of the sample ? Where, The density of silicon atoms is 5x1022 cm3. The electron and hole mobilities are 1500 cm2/v-s and 500 cm2 /v-s, respectively. K= 1.38x10-3 J/°K, q = 1.6x10-19C.