1. An n-type piece of silicon experiences an electric field equal to 0.1 V/um. Note that the mobility values of electrons and holes in silicon are 1350 cm²/V's and 480 cm²/V-s, respectively. (a) Calculate the velocity of electrons and holes in this material. (b) What doping level is necessary to provide a current density of 1 mA/um² under these conditions? Assume the hole current is negligible.

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1. An n-type piece of silicon experiences an electric field equal to 0.1 V/um. Note that the mobility values
of electrons and holes in silicon are 1350 cm²/V's and 480 cm²/V-s, respectively.
(a) Calculate the velocity of electrons and holes in this material.
(b) What doping level is necessary to provide a current density of 1 mA/um² under these conditions?
Assume the hole current is negligible.
Transcribed Image Text:1. An n-type piece of silicon experiences an electric field equal to 0.1 V/um. Note that the mobility values of electrons and holes in silicon are 1350 cm²/V's and 480 cm²/V-s, respectively. (a) Calculate the velocity of electrons and holes in this material. (b) What doping level is necessary to provide a current density of 1 mA/um² under these conditions? Assume the hole current is negligible.
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