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A specimen of pure silicon at 300 k° has a density o: charge carriers 2.5 ×1019 /m³. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of silicon. All impurity atoms are supposed to be ionized. The density of silicon atom is 4.2 ×1028 atoms/m³. Calculate the conductivity of the doped silicon if electron mobility is 0.38 m²/V.s. If the silicon bar is 5 ×10-³ m long and has a cross sectiona area of (5 ×10-6 )² m², Determine the voltage drop across the semiconductor bar for a current of 1 µA flowing through it. a. 20 S/m, 10 mV b. not all the above O C. 22.3 S/m, 60.25 mV d. 2.42x103 S/m, 82.6 mV o e. 5.797 S/m, 60 V f. 25.37 S/m, 40.25 mV - g. 23 S/m, 84 mV h. 0.82x106 S/m, 50 V

A specimen of pure silicon at 300 k° has a density o: charge carriers 2.5 ×1019 /m³. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of silicon. All impurity atoms are supposed to be ionized. The density of silicon atom is 4.2 ×1028 atoms/m³. Calculate the conductivity of the doped silicon if electron mobility is 0.38 m²/V.s. If the silicon bar is 5 ×10-³ m long and has a cross sectiona area of (5 ×10-6 )² m², Determine the voltage drop across the semiconductor bar for a current of 1 µA flowing through it. a. 20 S/m, 10 mV b. not all the above O C. 22.3 S/m, 60.25 mV d. 2.42x103 S/m, 82.6 mV o e. 5.797 S/m, 60 V f. 25.37 S/m, 40.25 mV - g. 23 S/m, 84 mV h. 0.82x106 S/m, 50 V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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A specimen of pure silicon at 300 k° has a density of charge carriers 2.5 ×1019 /m³. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of silicon. All impurity atoms are supposed to be ionized. The density of silicon atom is 4.2 ×1028 atoms/m³. Calculate the conductivity of the doped silicon if electron mobility is 0.38 m²/V.s. If the silicon bar is 5 ×10-³ m long and has a cross sectional area of (5 ×10-6 )² m², Determine the voltage drop across the semiconductor bar for a current of 1 µA flowing through it. а. 20 S/m, 10 mV b. not all the above С. 22.3 S/m, 60.25 mV d. 2.42x103 s/m, 82.6 mV е. 5.797 S/m, 60 V f. 25.37 S/m, 40.25 mV g. 23 S/m, 84 mV h. 0.82×106 S/m, 50 V
Transcribed Image Text:A specimen of pure silicon at 300 k° has a density of charge carriers 2.5 ×1019 /m³. It is doped with donor impurity atoms at the rate of one impurity atom every 106 atoms of silicon. All impurity atoms are supposed to be ionized. The density of silicon atom is 4.2 ×1028 atoms/m³. Calculate the conductivity of the doped silicon if electron mobility is 0.38 m²/V.s. If the silicon bar is 5 ×10-³ m long and has a cross sectional area of (5 ×10-6 )² m², Determine the voltage drop across the semiconductor bar for a current of 1 µA flowing through it. а. 20 S/m, 10 mV b. not all the above С. 22.3 S/m, 60.25 mV d. 2.42x103 s/m, 82.6 mV е. 5.797 S/m, 60 V f. 25.37 S/m, 40.25 mV g. 23 S/m, 84 mV h. 0.82×106 S/m, 50 V
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