The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 x 1016 cm-³ and electronic charge q = 1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm², is Drift velocity (cm/s) 10 0 linear constant 5x105 Electric field (V/cm)

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The dependence of drift velocity of electrons on
electric field in a semiconductor is shown below.
The semiconductor has a uniform electron
concentration of n = 1 × 10¹6 cm-3 and electronic
charge q = 1.6 × 10-19 C. If a bias of 5 V is applied
across a 1 µm region of this semiconductor, the
resulting current density in this region, in kA/cm²,
is
Drift velocity (cm/s)
10
linear
constant
5x10 Electric field (V/cm)
Transcribed Image Text:The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 × 10¹6 cm-3 and electronic charge q = 1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm², is Drift velocity (cm/s) 10 linear constant 5x10 Electric field (V/cm)
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