Consider a silicon PN junction diode at T 25°C with the following parameters: the concentration of the minority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 10 hole/m³, the hole's diffusion length 190um, the hole's diffusion constant (30 cm/s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the sectional area is 10 m2 , and the intrinsic carriers concentration ( n,= 1.5x1010 cm). If the current in the junction is 3mA when the diode forward is biased at 0.65V, determine: 1- The electron's diffusion constant. 2- The impurities concentration in the P-side, and in the N-side. 3- The current in the junction when the temperature rises to 150°C.

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question
Consider a silicon PN junction diode at T = 25°C with the following parameters: the concentration of the
minority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 104 hole/m', the hole's diffusion
length 190µm, the hole's diffusion constant (30 cm /s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the
-6
sectional area is 10° m? , and the intrinsic carriers concentration ( n;= 1.5x1010 cm). If the current in the
junction is 3mA when the diode forward is biased at 0.65V, determine:
1- The electron's diffusion constant.
2- The impurities concentration in the P-side, and in the N-side.
3- The current in the junction when the temperature rises to150°C.
Transcribed Image Text:Consider a silicon PN junction diode at T = 25°C with the following parameters: the concentration of the minority carriers in P-side is 2.25 x 10 electron/m³, and in N -side is 4.5 x 104 hole/m', the hole's diffusion length 190µm, the hole's diffusion constant (30 cm /s), carriers lifetime t, is 2 x10° s and t, is 4 x 10s, the -6 sectional area is 10° m? , and the intrinsic carriers concentration ( n;= 1.5x1010 cm). If the current in the junction is 3mA when the diode forward is biased at 0.65V, determine: 1- The electron's diffusion constant. 2- The impurities concentration in the P-side, and in the N-side. 3- The current in the junction when the temperature rises to150°C.
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 5 steps

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,