The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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The capacitance of a single sided diode in
the reverse bias mode strongly depend on
Select one:
O a.
The carrier concentration of the
highly doped region
O b. The carrier concentration of the
lightly doped region
Oc. The carrier concentration of the
substrate
O d. None of the answers
Transcribed Image Text:The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers
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