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The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers

The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers
Transcribed Image Text:The capacitance of a single sided diode in the reverse bias mode strongly depend on Select one: O a. The carrier concentration of the highly doped region O b. The carrier concentration of the lightly doped region Oc. The carrier concentration of the substrate O d. None of the answers
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