5. Determine the concentration of free electrons,concentration of holes in the material and the type ofmaterial ( if n or p) given that a germanium materials isdopes with 3x1014 donor atoms/cm3 and 1.5x1012 acceptoratoms/cm³. Material is subjected to a temperature of300K. Check the intrinsic carrier concentration below:Drift Current in SemiconductorsPropertyGeSiAtomic number3214Atomic weight72.628.1Density (gram/cm³)5.322.33Atoms per cm³5x1EGo (energy gap at 0 °K ) (eV)Eg (energy gap at 300 °K ) (eV)ni (intrinsic carrier concentration) at300° K (number Icm³)0.7851.210.721.12.5 x10131.5 x10102.3 x105Intrinsic resistivity at 300° K (2- cm)un (electron mobility) (cm²/ V-sec) at300° K4538001300up (hole mobility) (cm²/ V-sec) at300° K1800500Dn (electron diffusion constantat 300° K) (cm²/sec)9934Dp (hole diffusion constant at 300° K )(cm?/sec)4713

Brief description : Donor doping concentration = ND Acceptor doping concentration = NA ni :…

5. Determine the concentration of free electrons, concentration of holes in the material and the type of material ( if n or p) given that a germanium materials is dopes with 3x1014 donor atoms/cm³ and 1.5x1012 acceptor atoms/cm³. Material is subjected to a temperature of 300K. Check the intrinsic carrier concentration below: Drift Current in Semiconductors Property Ge Si Atomic number 32 14 Atomic weight Density (gram/cm³) Atoms per cm3 72.6 28.1 5.32 2.33 4.4x1022 5x1022 EGo (energy gap at 0 °K ) (eV) 0.785 1.21 EG (energy gap at 300 °K ) (eV) 0.72 1.1 ni (intrinsic carrier concentration) at 300° K (number Icm³) 2.5 x1013 1.5 x1010 Intrinsic resistivity at 300° K (2- cm) un (electron mobility) (cm²/ V-sec) at 300° K 45 2.3 x105 3800 1300 up (hole mobility) (cm²/ V-sec) at 300° K 1800 500 Dn (electron diffusion constant at 300° K) (cm²/sec) 99 34 Dp (hole diffusion constant at 300° K ) (cm²/sec) 47 13

5. Determine the concentration of free electrons, concentration of holes in the material and the type of material ( if n or p) given that a germanium materials is dopes with 3x1014 donor atoms/cm³ and 1.5x1012 acceptor atoms/cm³. Material is subjected to a temperature of 300K. Check the intrinsic carrier concentration below: Drift Current in Semiconductors Property Ge Si Atomic number 32 14 Atomic weight Density (gram/cm³) Atoms per cm3 72.6 28.1 5.32 2.33 4.4x1022 5x1022 EGo (energy gap at 0 °K ) (eV) 0.785 1.21 EG (energy gap at 300 °K ) (eV) 0.72 1.1 ni (intrinsic carrier concentration) at 300° K (number Icm³) 2.5 x1013 1.5 x1010 Intrinsic resistivity at 300° K (2- cm) un (electron mobility) (cm²/ V-sec) at 300° K 45 2.3 x105 3800 1300 up (hole mobility) (cm²/ V-sec) at 300° K 1800 500 Dn (electron diffusion constant at 300° K) (cm²/sec) 99 34 Dp (hole diffusion constant at 300° K ) (cm²/sec) 47 13

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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