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A p-type sample of silicon has a resistivity of 5 2-em. In this sample, the hole mobility, , is 600 cm /V-s and the electron mobility, u is 1600 cm /V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift curent density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m)

A p-type sample of silicon has a resistivity of 5 2-em. In this sample, the hole mobility, , is 600 cm /V-s and the electron mobility, u is 1600 cm /V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift curent density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Question 4 * A p-type sample of silicon has a resistivity of 5 2-cm. In this sample, the hole mobility, µ is 600 cm /V-s and the electron mobility, H, is 1600 cm V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift current density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m) إجابتك
Transcribed Image Text:Question 4 * A p-type sample of silicon has a resistivity of 5 2-cm. In this sample, the hole mobility, µ is 600 cm /V-s and the electron mobility, H, is 1600 cm V-s. Ohmic contacts are formed on the ends of the sample and a uniform electric field is imposed which results in a drift current density in the sample is 2 x 10 A/cm. a) What are the hole and electron concentrations in this sample? إجابتك b) What are the hole and electron drift velocities under these conditions in * ?(m/s) إجابتك c) What is the magnitude of the * ?electric field in (V/m) إجابتك
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