Question 4*A p-type sample of silicon has a resistivity of 5 2-cm. In this sample, the hole mobility, µ is 600cm /V-s and the electron mobility, H, is 1600 cm V-s. Ohmic contacts are formed on the ends of thesample and a uniform electric field is imposed which results in a drift current density in the sample is 2x 10 A/cm.a) What are the hole and electron concentrations in this sample?إجابتكb) What are the hole and electron driftvelocities under these conditions in* ?(m/s)إجابتكc) What is the magnitude of the* ?electric field in (V/m)إجابتك

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Answered: A p-type sample of silicon has a…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Question 4
USING D1 1N4001G or SILICON DIODE.
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