PROBLEM 2 Refer to the plot of intrinsic carrier concentration (n) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why n increases with increasing temperature. YoU may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 27 200 100 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si,N, Lead(I) sulfide Silicon dioxide Copper(1) oxide IV-VI PbS 0.37 IV-VI 1013 Sio, Cu,0 2.1 1012 1011 1010 GaAs 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1 1000/T(K) Intrinsic carrier density n, (cm)
PROBLEM 2 Refer to the plot of intrinsic carrier concentration (n) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why n increases with increasing temperature. YoU may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 27 200 100 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si,N, Lead(I) sulfide Silicon dioxide Copper(1) oxide IV-VI PbS 0.37 IV-VI 1013 Sio, Cu,0 2.1 1012 1011 1010 GaAs 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1 1000/T(K) Intrinsic carrier density n, (cm)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Transcribed Image Text:PROBLEM 2
Refer to the plot of intrinsic carrier concentration (ni) vs. absolute
temperature (T) below. Use the back of this sheet if necessary.
a)
Explain qualitatively the differences in intrinsic carrier concentrations
for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?)
You may want to refer to the Cheat Sheet.
b) Explain qualitatively why ni increases with increasing temperature. You
may want tO use the equation on the Cheat Sheet.
1500
T( C)
1000 500
200 100
27
1019
List of band gaps of semiconductor materials.
1018
Band g
@ 302
Group Material
Symbol
1017
IV
Diamond
5.5
IV
Silicon
Si
Ge
1.11
1016
IV
Germanium
Ge
0.67
III-V
Gallium(III) nitride
GaN
3.4
1015
III-V
Gallium(II) phosphide GaP
2.26
A Si
III-V
Gallium(III) arsenide
GaAs
1.43
1014
IV-V
Silicon nitride
Si, N.
Lead(I) sulfide
Silicon dioxide
IV-VI
Pbs
0.37
IV-VI
1013
Sio,
Copper(1) oxide
Cu,O
2.1
1012
101
1010
GAAS
109
108
107
106
0.5 1.0 1.5 2.0 2.5 3.0
1000/T(K)
Intrinsic carrier density n, (cm)
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