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PROBLEM 2 Refer to the plot of intrinsic carrier concentration (n) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why n increases with increasing temperature. YoU may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 27 200 100 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si,N, Lead(I) sulfide Silicon dioxide Copper(1) oxide IV-VI PbS 0.37 IV-VI 1013 Sio, Cu,0 2.1 1012 1011 1010 GaAs 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1 1000/T(K) Intrinsic carrier density n, (cm)

PROBLEM 2 Refer to the plot of intrinsic carrier concentration (n) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why n increases with increasing temperature. YoU may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 27 200 100 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si,N, Lead(I) sulfide Silicon dioxide Copper(1) oxide IV-VI PbS 0.37 IV-VI 1013 Sio, Cu,0 2.1 1012 1011 1010 GaAs 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1 1000/T(K) Intrinsic carrier density n, (cm)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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PROBLEM 2 Refer to the plot of intrinsic carrier concentration (ni) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why ni increases with increasing temperature. You may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 200 100 27 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(III) nitride GaN 3.4 1015 III-V Gallium(II) phosphide GaP 2.26 A Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si, N. Lead(I) sulfide Silicon dioxide IV-VI Pbs 0.37 IV-VI 1013 Sio, Copper(1) oxide Cu,O 2.1 1012 101 1010 GAAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K) Intrinsic carrier density n, (cm)
Transcribed Image Text:PROBLEM 2 Refer to the plot of intrinsic carrier concentration (ni) vs. absolute temperature (T) below. Use the back of this sheet if necessary. a) Explain qualitatively the differences in intrinsic carrier concentrations for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) You may want to refer to the Cheat Sheet. b) Explain qualitatively why ni increases with increasing temperature. You may want tO use the equation on the Cheat Sheet. 1500 T( C) 1000 500 200 100 27 1019 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 IV Silicon Si Ge 1.11 1016 IV Germanium Ge 0.67 III-V Gallium(III) nitride GaN 3.4 1015 III-V Gallium(II) phosphide GaP 2.26 A Si III-V Gallium(III) arsenide GaAs 1.43 1014 IV-V Silicon nitride Si, N. Lead(I) sulfide Silicon dioxide IV-VI Pbs 0.37 IV-VI 1013 Sio, Copper(1) oxide Cu,O 2.1 1012 101 1010 GAAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K) Intrinsic carrier density n, (cm)
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