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Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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EXERCISE
3.4 A uniform bar of n-type silicon of 2-um length has a voltage of I V applied across it. If N, =
10"/cm' and a,- 1350 cm'/V-s, find (a) the electron drift velocity, (b) the time it takes an electron to
cross the 2-um length, (c) the drift-current density, and (d) the drift current in the case that the silicon
bar has a cross-sectional area of 0.25 um'.
Ans. 6.75 x 10 cm/s 30 ps; 1.08 x 1o' Alem: 27 uA
3.3.2 Diffusion Current
Transcribed Image Text:EXERCISE 3.4 A uniform bar of n-type silicon of 2-um length has a voltage of I V applied across it. If N, = 10"/cm' and a,- 1350 cm'/V-s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-um length, (c) the drift-current density, and (d) the drift current in the case that the silicon bar has a cross-sectional area of 0.25 um'. Ans. 6.75 x 10 cm/s 30 ps; 1.08 x 1o' Alem: 27 uA 3.3.2 Diffusion Current
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