Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy, where E-1.12 eV and n-1.5x1010 Repeat when the Fermi energy level is 0.3 eV above the valence band energy. cm3.
Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy, where E-1.12 eV and n-1.5x1010 Repeat when the Fermi energy level is 0.3 eV above the valence band energy. cm3.
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Calculate the thermal equilibrium electron and hole concentration in silicon at T-300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy, where E-1.12 eV and n-1.5x1010 Repeat when the Fermi energy level is 0.3 eV above the valence band energy. cm3.
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