Q 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge ers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4-Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The depletion region expands at a reverse voltage of 12V if you know that the relative permittivity is 15.

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Q 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times,
the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge
carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes
m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C
1- Fermi position at each
end 2- Energy gap in ev
3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs
0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm
4- Density of carriers for each party (majority and minority)
5- The effort of the divider
6- The junction current at an amplitude of 0.4
7- The depletion region expands at a reverse voltage of 12V if you know that the relative permittivity is 15.
Transcribed Image Text:Q 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4- Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The depletion region expands at a reverse voltage of 12V if you know that the relative permittivity is 15.
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