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نقطة واحل Calculate the thermal- equilibrium hole concentration in silicon at T= 250 K. Assume that the Fermi energy is 0.27 eV above the valence-band energy. The value of Nv for silicon at T = .300 K is 1.04X10^19 cm^-3 29.14 x 10^13 cm^-3 2.914 x 10^13 cm^-3 19.14 x 10^13 cm^-3 1.914 x 10^13 cm^-3

نقطة واحل Calculate the thermal- equilibrium hole concentration in silicon at T= 250 K. Assume that the Fermi energy is 0.27 eV above the valence-band energy. The value of Nv for silicon at T = .300 K is 1.04X10^19 cm^-3 29.14 x 10^13 cm^-3 2.914 x 10^13 cm^-3 19.14 x 10^13 cm^-3 1.914 x 10^13 cm^-3

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نقطة واحدة Calculate the thermal- equilibrium hole concentration in silicon at T= 250 K. Assume that the Fermi energy is O.27 eV above the valence-band energy. The value of Nv for silicon at T = .300 K is 1.04X10^19 cm^-3 29.14 x 10^13 cm^-3 O 2.914 x 10^13 cm^-3 19.14 x 10^13 cm^-3 O 1.914 x 10^13 cm^-3 O
Transcribed Image Text:نقطة واحدة Calculate the thermal- equilibrium hole concentration in silicon at T= 250 K. Assume that the Fermi energy is O.27 eV above the valence-band energy. The value of Nv for silicon at T = .300 K is 1.04X10^19 cm^-3 29.14 x 10^13 cm^-3 O 2.914 x 10^13 cm^-3 19.14 x 10^13 cm^-3 O 1.914 x 10^13 cm^-3 O
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