All n-channel MOS device in a technology for which oxide thickness is 20nm, minimum channel length is 1um, kn' = 100 uA/V2 and Vt = 0.6V operates in the triode region, with small VDs and with the gate-source voltage in the range 0V to 5V. What device width is needed to ensure that the minimum available resistance is 1KQ.
All n-channel MOS device in a technology for which oxide thickness is 20nm, minimum channel length is 1um, kn' = 100 uA/V2 and Vt = 0.6V operates in the triode region, with small VDs and with the gate-source voltage in the range 0V to 5V. What device width is needed to ensure that the minimum available resistance is 1KQ.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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