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Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm2². Use the SS figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V O VT= -0.990 V O VT= -0.205 V

Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm2². Use the SS figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V O VT= -0.990 V O VT= -0.205 V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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&ms (V) 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 1014 1015 p+ poly (n Si) Au (n Si) -p+ poly (p Si) Au (p Si) n poly (n Si) + Al (n Si) Al (p Si) n+ poly (p Si) 1016 1017 NB (cm-3) 1018 Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide thickness, tox, is 20 nm and the equivalent oxide charge 'SS 4 X 10-10 C/cm². Use the figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate.
Transcribed Image Text:&ms (V) 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 1014 1015 p+ poly (n Si) Au (n Si) -p+ poly (p Si) Au (p Si) n poly (n Si) + Al (n Si) Al (p Si) n+ poly (p Si) 1016 1017 NB (cm-3) 1018 Consider a MOS device with a p-type silicon substrate with N₁ = 1 X 10¹4 cm-³. The oxide thickness, tox, is 20 nm and the equivalent oxide charge 'SS 4 X 10-10 C/cm². Use the figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate.
Consider a MOS device with a p-type silicon substrate with N = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm². Use the 'ss figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V OVT = -0.990 V OVT = -0.205 V
Transcribed Image Text:Consider a MOS device with a p-type silicon substrate with N = 1 X 10¹4 cm-³. The oxide Na thickness, tox, is 20 nm and the equivalent oxide charge Qs = 4 X 10-10 C/cm². Use the 'ss figure above to find the metal-semiconductor work function differences and use them to find the threshold voltage for an aluminum gate. VT=0.882 V O VT=0.378 V OVT = -0.990 V OVT = -0.205 V
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