Сс+5 VRD=7KQR₁ = 165 kvoViR₂ = 35 kRs = 0.5 k-5 VFigure 4.19 Common-source circuit with source resistor and positive and negative supplyvoltages nEXERCISE PROBLEMEx 4.5: For the circuit shown in Figure 4.19, the transistor parameters areVTN = 0.8 V, K₂ = 1 mA/V², and λ = 0. (a) From the dc analysis, find ID andVDSQ. (b) Determine the small-signal voltage gain. (Ans. (a) ID = 0.494 mA,VDSQ = 6.30 V; (b) A₁ = -5.78).

Answered: Image /qna-images/answer/c31da756-bc5a-490d-b29a-38c9e72d725d.jpg

Answered: Сс +5 V RD=7KQ R₁ = 165 k vo Vi R₂ = 35…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Objective: Determine the small-signal voltage gain of a circuit biased with a constant- current source and incorporating a source bypass capacitor. +5 V Rp = 7 kn For the circuit shown in Figure 4.21, the transistor parameters are: VTN = 0.8 V, K, = 1 mA/V?, and = 0. o vo RG= 200 k2 +Cs lo = 0.5 mA 4 -5 V
Explain all the steps
Fixed-bias Configurationa. What happen to the collector voltage, if the collector resistor is disconnected (open)? b. What happen to the base voltage if the base resistor is disconnected (open)?c. What happen to the collector voltage, if the collector resistor is shorted?
QUESTION 4 a) Discuss four advantages of field effect transistor (FET) over bipolar junction transistor (BJT). b) With the aid of suitable diagrams, explain the primary difference between n-channel depletion and enhancement type metal oxide semiconductor field effect transistors (MOSFETS).
For the common-source amplifier shown in Figure P4.27, the transistor parameters are VT P = −1.2 V, Kp = 2 mA/V2, and λ = 0.03 V−1. The drain resistor is RD = 4 kOhm. (a) Determine IQ such that VSDQ = 5 V. (b) Find the small-signal voltage gain for RL = ∞. (c) Repeat part (b) for RL = 8 kOhm.
explain with diagram or circuit
Discuss High level modulator: circuit diagram and operation - Collector modulator
Why is there a difference in the beta value? (D. C) and the beta (A. C) value in some transistor output characteristic schemes.
EXERCISE PROBLEM Ex 4.6: The common-source amplifier in Figure 4.23 has transistor parameters = 40 μA/V², W/L = 40, VTP = −0.4 V, and λ = 0.02 V-1. (a) Determine IDQ and VSDQ. (b) Find the small-signal voltage gain. (Ans. (a) IDQ = 1.16 mA, VSDQ = 2.29 V; (b) A₁ = -3.68) CCI Vi www +3 V Rs = 1.2 k RG = 100 k - Vo RD = 2 k -3 V Figure 4.23 Figure for Exercise Ex 4.6 Cs
4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor parameters are: VTN = 0.8 V, K, = 1 mA/V², and 2 = 0. The circuit para- meters are VDD = 5 V, Rs = 1 k2, Rp = 4k2, R1 = 225 k2, and R2 = 175 k2. (a) Calculate the quiescent values Ipo and VpsQ. (b) Deter- mine the small-signal voltage gain for R1 = 0. (c) Determine the value of Rị that will reduce the small-signal voltage gain to 75 percent of the value found in part (b). VDD Rp Rin Cc2 Cci Figure P4.15
This problem is AC analysis problem. DC analysis is not needed to answer the question. A) Convert this bias circuit into a bypassed common emitter amplifier that has an output across a load resistor (RL). To do this you should draw three capacitors on the figure below, an input voltage source, and any resistors you think that should be added. B) In the space below the figure, Draw the hybrid t model for this amplifier circuit including all voltages and resistors. Label Vi, Vbe, and vo on the model. Assume the capacitors you add act as short circuits at AC. Be sure to include resistors R1, R2, R3, R4, and RL in the hybrid pi model. > When you "verify" a mode of operation you will need to calculate all three voltages (Vc, Ve, VE for BJTS and VG, Vs, Vo for MOSFETS) and show the correct two conditions are satisfied. > Assume Capacitors acts like open circuits at DC and short circuits for AC. 12V Assume the following: o Beta = 100 O VBE = 0.7 o V: (Thermal) = 26 mV o Vr (Threshold) = 2V O…
4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor parameters are: VIN = 0.8 V, K, =I mA/V², and à = 0. The circuit para- meters are VpD = 5 V, Rs = 1 k2, Rp = 4 k2, R = 225 k2. and R2 = 175 k2. (a) Calculate the quiescent values Ipo and Vpso. (b) Deter- mine the small-signal voltage gain for Ri = 00. (c) Determine the value of RL that will reduce the small-signal voltage gain to 75 percent of the value found in part (b). VpD Figure P4.15 ww ww

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