Problem 1 A graph of mobility vs. doping is given in Figure 1. A semiconductor (Si) bar is uniformly doped with 1×10¹c m ³ Phosphorus atoms. The semiconductor bar has a cross-section of 100 µm by 100 µm. Assume intrinsic concentration at 300K to be 1 x 1010/cm³. A. At room temperature, what is the majority and minority mobile carrier concentration? Will there be any current if no voltage is applied? Why? B. An electric field of 100 V/cm is applied to the bar, calculate the majority carrier drift current density Jndrift in the semiconductor. C. With the applied voltage, which direction will the majority carriers drift current be moving? Will there be minority carrier drift current? If so, qualitatively compare the majority and minority carrier drift currents? D. Will there be any diffusion current? Why? Un orμp (cm²/V-sec) 1000 NA or ND (cm³) Ha (cm2V-sec) 1 x 1014.... 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 Electrons Holes 1017 1018 NA or ND (cm-3) Figure 1: Mobility vs. doping concentration at 300K.
Problem 1 A graph of mobility vs. doping is given in Figure 1. A semiconductor (Si) bar is uniformly doped with 1×10¹c m ³ Phosphorus atoms. The semiconductor bar has a cross-section of 100 µm by 100 µm. Assume intrinsic concentration at 300K to be 1 x 1010/cm³. A. At room temperature, what is the majority and minority mobile carrier concentration? Will there be any current if no voltage is applied? Why? B. An electric field of 100 V/cm is applied to the bar, calculate the majority carrier drift current density Jndrift in the semiconductor. C. With the applied voltage, which direction will the majority carriers drift current be moving? Will there be minority carrier drift current? If so, qualitatively compare the majority and minority carrier drift currents? D. Will there be any diffusion current? Why? Un orμp (cm²/V-sec) 1000 NA or ND (cm³) Ha (cm2V-sec) 1 x 1014.... 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 Electrons Holes 1017 1018 NA or ND (cm-3) Figure 1: Mobility vs. doping concentration at 300K.
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Transcribed Image Text:Problem 1
A graph of mobility vs. doping is given in Figure 1. A semiconductor (Si) bar is uniformly doped with
1×10¹c m ³ Phosphorus atoms. The semiconductor bar has a cross-section of 100 µm by 100 µm.
Assume intrinsic concentration at 300K to be 1 x 1010/cm³.
A. At room temperature, what is the majority and minority mobile carrier concentration? Will there be any
current if no voltage is applied? Why?
B. An electric field of 100 V/cm is applied to the bar, calculate the majority carrier drift current density
Jndrift in the semiconductor.
C. With the applied voltage, which direction will the majority carriers drift current be moving? Will there be
minority carrier drift current? If so, qualitatively compare the majority and minority carrier drift currents?
D. Will there be any diffusion current? Why?
Un orμp (cm²/V-sec)
1000
NA or ND (cm³)
Ha
(cm2V-sec)
1 x 1014....
1358
461
2
1357
460
100
5
1352
459
1 x 1015
1345
458
2
1332
455
5
1298
448
1 x 1016
1248
437
2
1165
419
5
986
378
1 x 1017
801
331
10
1014
1015
1016
Electrons
Holes
1017
1018
NA or ND (cm-3)
Figure 1: Mobility vs. doping concentration at 300K.
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