Problem 1 A graph of mobility vs. doping is given in Figure 1. A semiconductor (Si) bar is uniformly doped with 1×10¹c m ³ Phosphorus atoms. The semiconductor bar has a cross-section of 100 µm by 100 µm. Assume intrinsic concentration at 300K to be 1 x 1010/cm³. A. At room temperature, what is the majority and minority mobile carrier concentration? Will there be any current if no voltage is applied? Why? B. An electric field of 100 V/cm is applied to the bar, calculate the majority carrier drift current density Jndrift in the semiconductor. C. With the applied voltage, which direction will the majority carriers drift current be moving? Will there be minority carrier drift current? If so, qualitatively compare the majority and minority carrier drift currents? D. Will there be any diffusion current? Why? Un orμp (cm²/V-sec) 1000 NA or ND (cm³) Ha (cm2V-sec) 1 x 1014.... 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 Electrons Holes 1017 1018 NA or ND (cm-3) Figure 1: Mobility vs. doping concentration at 300K.

Problem 1 A graph of mobility vs. doping is given in Figure 1. A semiconductor (Si) bar is uniformly doped with 1×10¹c m ³ Phosphorus atoms. The semiconductor bar has a cross-section of 100 µm by 100 µm. Assume intrinsic concentration at 300K to be 1 x 1010/cm³. A. At room temperature, what is the majority and minority mobile carrier concentration? Will there be any current if no voltage is applied? Why? B. An electric field of 100 V/cm is applied to the bar, calculate the majority carrier drift current density Jndrift in the semiconductor. C. With the applied voltage, which direction will the majority carriers drift current be moving? Will there be minority carrier drift current? If so, qualitatively compare the majority and minority carrier drift currents? D. Will there be any diffusion current? Why? Un orμp (cm²/V-sec) 1000 NA or ND (cm³) Ha (cm2V-sec) 1 x 1014.... 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 Electrons Holes 1017 1018 NA or ND (cm-3) Figure 1: Mobility vs. doping concentration at 300K.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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