EXERCISE PROBLEMEx 1.5: (a) Calculate Vыi for a GaAs pn junction at T = 300 K forNa = 1016 cm³ and Nd = 10¹7 cm³ (b) Repeat part (a) for a Germanium pnjunction with the same doping concentrations. (Ans. (a) Vbi = 1.23 V,(b) Vbi 0.374 V).

Answered: Image /qna-images/answer/34ec65db-6b5a-4ef7-96f1-1b8d171b9831.jpg

Answered: EXERCISE PROBLEM Ex 1.5: (a) Calculate…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider the circuit shown below. A string of four identical diodes is used so that Vo = 2.8V when IL = 0, and Vo changes by 16 mV per 1mA of load current. Assume n=1.7. (i) Find the small signal (incremental) resistance rd for each diode. (ii) Find the value of R.
Sketch the pn junction energy band diagram in equilibrium (zero bias) showing the Fermi level as a flat horizontal line. Review the meaning of the Fermi level and position of Fermi level in p and n type semiconductors.
Calculate the intrinsic carrier concentration of a semiconductor in units of (cm-3). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: Germanium Temperature: 206 (K)
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
4
The maximum electric field in a reverse - biased semiconductor p - n junction at T - 300K is to be | Emax = 1 * 10% V / cm. the doping concentrations are Nv = 1 * 10 'cm and Nx = 2x10 cm. Determine the reverse - bias voltage (in volt) that will produce this maximum electric field. Where n = 2.1 x 10 cm and, es - 12.9.
Question 2 a. Holes in an N-type semiconductor are: Select one:a. Majority carriers that are thermally producedb. Minority carriers that are produced by dopingc. Majority carriers that are produced by dopingd. Minority carriers that are thermally produced b. In semiconductors, Electron-hole pair is produced by: Select one:a. Recombinationb. Doping with pentavalent or trivalent atomsc. Thermal energy d. Barrier potential c. An LED Select one:a. acts as a variable resistanceb. emits light when forward-biasedc. senses light when reverse-biasedd. emits light when reverse-biased
Problem 2 In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 "K. Determine the new position of the Fermi level for temperatures of (a) 350 "K and (b) 400 "K. The Fermi level in a P-type material is given by
Problem 2. A MOSFET structure with an n-type substrate (also called 'body') has pn-junction diodes between 1) the source and the body, and 2) the drain and the body. If the substrate was grounded, and a -1 V was placed on the source electrode, and a 2 V was placed on the drain electrode, what would be the regions of operation of both the source/body and drain/body pn-junction diodes?
10. Consider a step pn junction made of silicon. Carrier lifetimes are given as T, = 10-s and T, = 10 is. Assume long diode, i.e. long quasi-neutral regions. What must be the doping density ratio, NA/Np, in order to have 95% of the total current in the depletion region carried by electrons? Answers within 5% error will be considered correct. Enter answer here
Load-line Analysis a.1 For the series diode configuration employing the diode characteristics given, determine: Vp, ID, Voa, Ioa, VR. Draw the load-line and plot the Q-point. Using the Q-point values, calculate the dc resistance Rp. A Io (mA) 20 18 VD 16 + 14 Si 12+ 10+ 8 E 10 V 0.5 k2 VR R 4 2 -- 0. 0.5 0.8 Vp (V) (a) (b) a.2 Repeat a.1 using the approximate model of a silicon diode. Note: You will use the characteristic curve of the approximate model of a diode and plot the same load-line.
a) Calculate the intrinsic Fermi level (Ei - EV) of a semiconductor in units of (eV). Use the room temperature bandgap and effective density of states. Assume the parameters given below: Semiconductor: GaAs Temperature: 258 (K)

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EXERCISE PROBLEM Ex 1.5: (a) Calculate Vыi for a GaAs pn junction at T = 300 K for Na = 1016 cm³ and Nd = 10¹7 cm³ (b) Repeat part (a) for a Germanium pn junction with the same doping concentrations. (Ans. (a) Vbi = 1.23 V, (b) Vbi 0.374 V).