EXERCISE PROBLEMEx 1.5: (a) Calculate Vыi for a GaAs pn junction at T = 300 K forNa = 1016 cm³ and Nd = 10¹7 cm³ (b) Repeat part (a) for a Germanium pnjunction with the same doping concentrations. (Ans. (a) Vbi = 1.23 V,(b) Vbi 0.374 V).

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Answered: EXERCISE PROBLEM Ex 1.5: (a) Calculate…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Consider the circuit shown below. A string of four identical diodes is used so that Vo = 2.8V when IL = 0, and Vo changes by 16 mV per 1mA of load current. Assume n=1.7. (i) Find the small signal (incremental) resistance rd for each diode. (ii) Find the value of R.
Sketch the pn junction energy band diagram in equilibrium (zero bias) showing the Fermi level as a flat horizontal line. Review the meaning of the Fermi level and position of Fermi level in p and n type semiconductors.
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
Question 2 a. Holes in an N-type semiconductor are: Select one:a. Majority carriers that are thermally producedb. Minority carriers that are produced by dopingc. Majority carriers that are produced by dopingd. Minority carriers that are thermally produced b. In semiconductors, Electron-hole pair is produced by: Select one:a. Recombinationb. Doping with pentavalent or trivalent atomsc. Thermal energy d. Barrier potential c. An LED Select one:a. acts as a variable resistanceb. emits light when forward-biasedc. senses light when reverse-biasedd. emits light when reverse-biased
Consider a uniformly doped silicon pn junction with doping concentrations Na= 2x10^17 cm-3 and Nd= 4 x 10^16 cm-3. Determine * .Vbi at T = 300 K
Problem 2. A MOSFET structure with an n-type substrate (also called 'body') has pn-junction diodes between 1) the source and the body, and 2) the drain and the body. If the substrate was grounded, and a -1 V was placed on the source electrode, and a 2 V was placed on the drain electrode, what would be the regions of operation of both the source/body and drain/body pn-junction diodes?
Semicinductrs
Load-line Analysis a.1 For the series diode configuration employing the diode characteristics given, determine: Vp, ID, Voa, Ioa, VR. Draw the load-line and plot the Q-point. Using the Q-point values, calculate the dc resistance Rp. A Io (mA) 20 18 VD 16 + 14 Si 12+ 10+ 8 E 10 V 0.5 k2 VR R 4 2 -- 0. 0.5 0.8 Vp (V) (a) (b) a.2 Repeat a.1 using the approximate model of a silicon diode. Note: You will use the characteristic curve of the approximate model of a diode and plot the same load-line.
please explain it step-by step
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
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a) Figure B3 shows a cross section for a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in diagrammatic form. (i) (ii) Sketch the energy band diagram for the MOSFET along the line X-Y shown in Figure B3 when bias voltages are applied such that the silicon surface is inverted. Label all important features of your sketch and state any assumptions made. Sketch a box plot showing the charges present in the structure when the silicon surface is inverted. Indicate the source of all the charges and state whether they are positive or negative. Source n+ Metal Silicon Substrate - p X dioxide Drain n*

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EXERCISE PROBLEM Ex 1.5: (a) Calculate Vыi for a GaAs pn junction at T = 300 K for Na = 1016 cm³ and Nd = 10¹7 cm³ (b) Repeat part (a) for a Germanium pn junction with the same doping concentrations. (Ans. (a) Vbi = 1.23 V, (b) Vbi 0.374 V).