Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
GS Is required to set up a drain current of 2.25 mA? 12. For a particular JFET, gm0 = 3200 µS. What is g„ when VGs = -4 V, given that VGS(off) =-8 V? %3D |

GS Is required to set up a drain current of 2.25 mA? 12. For a particular JFET, gm0 = 3200 µS. What is g„ when VGs = -4 V, given that VGS(off) =-8 V? %3D |

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
See similar textbooks
icon
Related questions
Question

#12 and #38

### JFET Biasing **Figure Explanation:** The diagram shows a JFET circuit with a power supply (\(V_{DD}\)), an ammeter (\(A\)), and a voltmeter (\(V\)). A resistor (\(R_D = 4.7 \, k\Omega\)) is connected with the JFET to measure current and voltage characteristics. **Text Transcription:** 1. **Problem 10:** - The following parameters are obtained from a certain JFET datasheet: \(V_{GS(off)} = -8 \, \text{V}\) and \(I_{DSS} = 5 \, \text{mA}\). - Determine the values of \(I_D\) for each value of \(V_{GS}\) ranging from 0 V to -8 V in 1 V steps. - Plot the transfer characteristic curve from these data. 2. **Problem 11:** - For the JFET in Problem 10, what value of \(V_{GS}\) is required to set up a drain current of 2.25 mA? 3. **Problem 12:** - For a particular JFET, \(g_{m0} = 3200 \, \mu\text{S}\). What is \(g_m\) when \(V_{GS} = -4 \, \text{V}\), given that \(V_{GS(off)} = -8 \, \text{V}\)? 4. **Problem 13:** - Determine the forward transconductance of a JFET biased at \(V_{GS} = -2 \, \text{V}\). From the datasheet, \(V_{GS(off)} = -7 \, \text{V}\) and \(g_m = 2000 \, \mu\text{S}\) at \(V_{GS} = 0 \, \text{V}\). Also determine the forward transfer conductance, \((S_{f})\). 5. **Problem 14:** - A p-channel JFET datasheet shows that \(I_{GSS} = 5 \, \text{nA at} \, V_{GS} = 10 \, \text{V}\). Determine the input resistance. 6. **Problem 15:** -
Transcribed Image Text:### JFET Biasing **Figure Explanation:** The diagram shows a JFET circuit with a power supply (\(V_{DD}\)), an ammeter (\(A\)), and a voltmeter (\(V\)). A resistor (\(R_D = 4.7 \, k\Omega\)) is connected with the JFET to measure current and voltage characteristics. **Text Transcription:** 1. **Problem 10:** - The following parameters are obtained from a certain JFET datasheet: \(V_{GS(off)} = -8 \, \text{V}\) and \(I_{DSS} = 5 \, \text{mA}\). - Determine the values of \(I_D\) for each value of \(V_{GS}\) ranging from 0 V to -8 V in 1 V steps. - Plot the transfer characteristic curve from these data. 2. **Problem 11:** - For the JFET in Problem 10, what value of \(V_{GS}\) is required to set up a drain current of 2.25 mA? 3. **Problem 12:** - For a particular JFET, \(g_{m0} = 3200 \, \mu\text{S}\). What is \(g_m\) when \(V_{GS} = -4 \, \text{V}\), given that \(V_{GS(off)} = -8 \, \text{V}\)? 4. **Problem 13:** - Determine the forward transconductance of a JFET biased at \(V_{GS} = -2 \, \text{V}\). From the datasheet, \(V_{GS(off)} = -7 \, \text{V}\) and \(g_m = 2000 \, \mu\text{S}\) at \(V_{GS} = 0 \, \text{V}\). Also determine the forward transfer conductance, \((S_{f})\). 5. **Problem 14:** - A p-channel JFET datasheet shows that \(I_{GSS} = 5 \, \text{nA at} \, V_{GS} = 10 \, \text{V}\). Determine the input resistance. 6. **Problem 15:** -
**Field-Effect Transistors (FETs)** **Section 8-4: The Ohmic Region** 30. A certain JFET is biased in the ohmic region at \( V_{DS} = 0.8 \, V \) and \( I_D = 0.20 \, mA \). What is the drain-to-source resistance? 31. The Q-point of a JFET is varied from \( V_{DS} = 0.4 \, V \) and \( I_D = 0.15 \, mA \) to \( V_{DS} = 0.6 \, V \) and \( I_D = 0.45 \, mA \). Determine the range of \( R_{DS} \) values. 32. Determine the transconductance of a JFET biased at the origin given that \( g_{m0} = 1.5 \, mS \), \( V_{GS} = -1 \, V \), and \( V_{GS(off)} = -3.5 \, V \). 33. Determine the ac drain-to-source resistance of the JFET in Problem 32. **Section 8-5: The MOSFET** 34. Draw the schematic symbols for n-channel and p-channel E-MOSFETs and D-MOSFETs. 35. Label the terminals. 36. In what mode is an n-channel D-MOSFET with a positive \( V_{GS} \) operating? 37. Describe the basic difference between an E-MOSFET and a D-MOSFET. 38. Explain why both types of MOSFETs have an extremely high input resistance at the gate. **MOSFET Characteristics and Parameters** 39. The datasheet for an E-MOSFET reveals that \( I_{D(on)} = 10 \, mA \) at \( V_{GS} = -12 \, V \) and \( V_{GS(off)} = -3 \, V \). Find \( I_D \) when \( V_{GS} = -6 \, V \). 39. Determine \( I_DSS \), given \( I_D = 3 \, mA \), \( V_{GS} = -2 \, V \), and \( V_{GS(off)} = -10 \, V \). 40. The datas
Transcribed Image Text:**Field-Effect Transistors (FETs)** **Section 8-4: The Ohmic Region** 30. A certain JFET is biased in the ohmic region at \( V_{DS} = 0.8 \, V \) and \( I_D = 0.20 \, mA \). What is the drain-to-source resistance? 31. The Q-point of a JFET is varied from \( V_{DS} = 0.4 \, V \) and \( I_D = 0.15 \, mA \) to \( V_{DS} = 0.6 \, V \) and \( I_D = 0.45 \, mA \). Determine the range of \( R_{DS} \) values. 32. Determine the transconductance of a JFET biased at the origin given that \( g_{m0} = 1.5 \, mS \), \( V_{GS} = -1 \, V \), and \( V_{GS(off)} = -3.5 \, V \). 33. Determine the ac drain-to-source resistance of the JFET in Problem 32. **Section 8-5: The MOSFET** 34. Draw the schematic symbols for n-channel and p-channel E-MOSFETs and D-MOSFETs. 35. Label the terminals. 36. In what mode is an n-channel D-MOSFET with a positive \( V_{GS} \) operating? 37. Describe the basic difference between an E-MOSFET and a D-MOSFET. 38. Explain why both types of MOSFETs have an extremely high input resistance at the gate. **MOSFET Characteristics and Parameters** 39. The datasheet for an E-MOSFET reveals that \( I_{D(on)} = 10 \, mA \) at \( V_{GS} = -12 \, V \) and \( V_{GS(off)} = -3 \, V \). Find \( I_D \) when \( V_{GS} = -6 \, V \). 39. Determine \( I_DSS \), given \( I_D = 3 \, mA \), \( V_{GS} = -2 \, V \), and \( V_{GS(off)} = -10 \, V \). 40. The datas
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 2 steps with 1 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Knowledge Booster
Arithmetic Operation and Code Conversion in Number System
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,
SEE MORE TEXTBOOKS