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5-26 Consider a 2-mm-thick silicon wafer to be doped (infused with impurities) using antimony. Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m³. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 × 1021 atoms/m³. What will be the time for the diffusion heat treatment? Assume that initially the silicon water contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mol and D。 for Sb diffusion in Si is 1.3 × 103 m²/s. Assume T = 1250 °C.

5-26 Consider a 2-mm-thick silicon wafer to be doped (infused with impurities) using antimony. Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m³. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 × 1021 atoms/m³. What will be the time for the diffusion heat treatment? Assume that initially the silicon water contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mol and D。 for Sb diffusion in Si is 1.3 × 103 m²/s. Assume T = 1250 °C.

Elements Of Electromagnetics
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
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5-26 Consider a 2-mm-thick silicon wafer to be doped (infused with impurities) using antimony. Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m³. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 × 1021 atoms/m³. What will be the time for the diffusion heat treatment? Assume that initially the silicon water contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mol and D。 for Sb diffusion in Si is 1.3 × 103 m²/s. Assume T = 1250 °C.
Transcribed Image Text:5-26 Consider a 2-mm-thick silicon wafer to be doped (infused with impurities) using antimony. Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m³. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 × 1021 atoms/m³. What will be the time for the diffusion heat treatment? Assume that initially the silicon water contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mol and D。 for Sb diffusion in Si is 1.3 × 103 m²/s. Assume T = 1250 °C.
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