Consider a 2-mm-thick silicon (Si) wafer to be doped using antimony (Sb). Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m3. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 x 1021 atoms/m3. What is the required time for the diffusion heat treatment? Assume that the silicon wafer initially contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mole and D0 for Sb diffusion in Si is 1.3 x 10-3 m2/s. Assume T = 1250°C.

Fick’s second law is given as :

Answered: Consider a 2-mm-thick silicon (Si)…

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

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Problem 1.1MA

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Consider a 2-mm-thick silicon (Si) wafer to be doped using antimony (Sb). Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 10²² atoms/m³. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 x 10²¹ atoms/m³. What is the required time for the diffusion heat treatment? Assume that the silicon wafer initially contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mole and D₀ for Sb diffusion in Si is 1.3 x 10^-3 m²/s. Assume T = 1250°C.

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