4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si photoresist 0.5 um
4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2. (a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂ sidewalls after 5 minutes of etching. 0.lum oxide 1 um 0.7um Poly-Si photoresist 0.5 um
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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Transcribed Image Text:4. Poly-Si of the following structure is to be etched using a completely anisotropic dry-etch
process, to remove poly-Si at a rate of 0.1 mm /min. However, this etching process has poor
selectivities: selectivity to SiO₂ is 5; selectivity to photoresist is 2.
(a) Sketch the cross-section after 5 minutes of etching. (b) Calculate the angle of the SiO₂
sidewalls after 5 minutes of etching.
0.lum
oxide
1 um
0.7um
Poly-Si
I
photoresist
0.5 um
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