4. In a manufacturing process, a transparent film is being bonded to a substrate as shown in the sketch. To cure the bond at a temperature To, a radiant source is used to provide a heat flux qo" (W/m²), all of which is absorbed at the bonded surface. The back of the substrate is maintained at T₁ while the free surface of the film is exposed to air at Too and a convection heat transfer coefficient h. Air To, h = Film Substrate L= 0.25 mm k₁ = 0.025 W/m-K L₁ = 1.0 mm Bond, To k=0.05 W/m-K (a) Show the thermal circuit representing the steady-state heat transfer situation. Be sure to label all elements, nodes, and heat rates. Leave in symbolic form. (b) Assume the following conditions: T= 20°C, h =50 W/m²⚫K, and T₁ = 30°C. Calculate the heat flux qo" that is required to maintain the bonded surface at T0= 60°C. (c) Compute and plot the required heat flux as a function of the film thickness for 0≤L+≤1 mm. Answer: (b) 2833W/m²

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
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Chapter4: Numerical Analysis Of Heat Conduction
Section: Chapter Questions
Problem 4.26P
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4. In a manufacturing process, a transparent film is being bonded to a substrate as shown in the
sketch. To cure the bond at a temperature To, a radiant source is used to provide a heat flux qo"
(W/m²), all of which is absorbed at the bonded surface. The back of the substrate is maintained at
T₁ while the free surface of the film is exposed to air at Too and a convection heat transfer coefficient
h.
Air
To, h
=
Film
Substrate
L= 0.25 mm
k₁ = 0.025 W/m-K
L₁ = 1.0 mm
Bond, To k=0.05 W/m-K
(a) Show the thermal circuit representing the steady-state heat transfer situation. Be sure to label
all elements, nodes, and heat rates. Leave in symbolic form.
(b) Assume the following conditions: T= 20°C, h =50 W/m²⚫K, and T₁ = 30°C. Calculate the heat
flux qo" that is required to maintain the bonded surface at T0= 60°C.
(c) Compute and plot the required heat flux as a function of the film thickness for 0≤L+≤1 mm.
Answer: (b) 2833W/m²
Transcribed Image Text:4. In a manufacturing process, a transparent film is being bonded to a substrate as shown in the sketch. To cure the bond at a temperature To, a radiant source is used to provide a heat flux qo" (W/m²), all of which is absorbed at the bonded surface. The back of the substrate is maintained at T₁ while the free surface of the film is exposed to air at Too and a convection heat transfer coefficient h. Air To, h = Film Substrate L= 0.25 mm k₁ = 0.025 W/m-K L₁ = 1.0 mm Bond, To k=0.05 W/m-K (a) Show the thermal circuit representing the steady-state heat transfer situation. Be sure to label all elements, nodes, and heat rates. Leave in symbolic form. (b) Assume the following conditions: T= 20°C, h =50 W/m²⚫K, and T₁ = 30°C. Calculate the heat flux qo" that is required to maintain the bonded surface at T0= 60°C. (c) Compute and plot the required heat flux as a function of the film thickness for 0≤L+≤1 mm. Answer: (b) 2833W/m²
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