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(a)
Interpretation:The mass of dopant required to generate one metric ton n-type silicon semiconductor have to determine.
Concept introduction:In n-type silicon semiconductor, the dopant must contain 5 valence electrons, so that after bonding with silicon (4 electron system) there remains an extra electron. The dopant frequently used for the commercially available silicon semiconductor is phosphorous (P), as the phosphorous impurity in silicon doesn’t increase the weight of the semiconductor much. The bonding pattern and roaming of extra electron of phosphorous generates n-type (negative charged or electron mediated) semiconductor. However, on the amount of dopant the silicon semiconductor may be subdivided into two category: light and heavy semiconductor.
In light silicon semiconductor 1 impurity atom is present per 1,000,000,000 or ppb (parts per billion) silicon atoms. On the other hand for generation of heavy silicon semiconductor 1 atom of impurity needed per 1,000 atom of silicon.
(a)
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Answer to Problem 8.105PAE
Solution:The mass of phosphorous required for the doping of silicon for making light and heavy semiconductor are
Explanation of Solution
1 metric ton of silicon =
On conversion of
1 mole of silicon is equivalent to
For making light semiconductor 1 atom of dopant is required per
Henceforth, number of dopant atoms required is
The number of moles of phosphorous required as dopant is
The mass of phosphorous dopant required
Henceforth to make the phosphorous incorporated light semiconductor per metric ton of silicon required
To prepare heavy silicon semiconductor number of dopant atoms required is
The number of moles of phosphorous required as dopant is
The mass of phosphorous dopant required
Henceforth to make the phosphorous incorporated heavy semiconductor per metric ton of silicon required
(b)
Interpretation:The mole fraction of the dopant required to generate commercially available silicon n-type semiconductor.
Concept introduction:The mole number of the impurity or dopant present per unit total mole number of the dopant and substrate in a semiconductor is called the mole fraction of the dopant. It can be expressed as-
(b)
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Answer to Problem 8.105PAE
Solution:The mole fraction of dopant phosphorous present in light and heavy 1 metric ton silicon semiconductor are
Explanation of Solution
For light silicon semiconductor doped by phosphorous the mole number of dopant and substrate are
On plugging the values in the equation,
So,
Thus in the light semiconductor the mole fraction of the dopant is
On the other side for heavy semiconductor doped by phosphorous the mole number of dopant and substrate are 35.713 and
On plugging the values in the equation,
So,
Thus in the light semiconductor the mole fraction of the dopant is
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Chapter 8 Solutions
Chemistry for Engineering Students
- 8.96 A business manager wants to provide a wider range of p- and n-type semiconductors as a strategy to enhance sales. You are the lead materials engineer assigned to communicate with this manager. How would you explain why there are more ways to build a p-type semiconductor from silicon than there are ways to build an n-type semiconductor from silicon?arrow_forward8.97 The doping of semiconductors can be done with enough precision to tune the size of the band gap in the material. Generally, in order to have a larger band gap, the dopant should be smaller than the main material. If you are a materials engineer and need a semiconductor that has lower conductivity thin pure silicon, what clement or elements could you use as your dopant? (You do not want either an n- or a p- type material) Explain your reasoning.arrow_forwardUse the web to look up information on nanotubes. Distinguish between single-walled and double-walled nanotubes.arrow_forward
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- Identify the set that contains compounds that form an ionic solid, a molecular solid, and a covalent- network solid. (A) Li2O, B203, BeO; (B) SiO2, P4010, Cl207; (C) Al203, P406, SIO2; (D) CO2, SiO2, GeO2;arrow_forward(a) (i) (ii) (iii) With the aid of a simple schematic, explain what covalent bonding is and how it is formed. What are the differences between a covalent bond and an ionic bond? Which type of bond is found in crystalline silicon? At room temperature do you expect an ionic crystal to be a good electrical conductor or a good electrical insulator? Explain why.arrow_forward4.50 Sketch the atomic packing of (a) the (100) plane for the BCC crystal structure, and (b) the (201) plane for the FCC crystal structure (similar to Figures 4.206 and 4.216).arrow_forward
- GaAs is a compound semiconductor commonly used for LEDs. Talk about the chemical bonds and crystal structures of GaAs crystals and explain why they become semiconductors, not metal alloys (consider the electronic structure of each atom and sp3 hybrid orbit).arrow_forward2arrow_forward12. Which one of the following statements is INCORRECT: (A) X-ray crystallography can give the three-dimensional arrangement of all the atoms in a molecule The ratio of the two main isotopes of Cl (chlorine) is about 3:1 (B) (C) The index of hydrogen deficiency (IDH) for C5H8O is 4. (D) Generally speaking, the longer the wavelength of the UV-Vis spectrum maximum (2max), the more conjugated the molecule is. The energy of photons used in UV-Vis spectroscopy is much higher than those used in NMR spectroscopy. (E)arrow_forward
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