Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
expand_more
expand_more
format_list_bulleted
Videos
Textbook Question
Chapter 7, Problem 7.13P
The circuit shown in Figure 7.10 has parameters
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
In this experiment, we are going to use a 2N3904 BJT. Examine the data sheet for this device
carefully. In particular, make a note of the current gain (identified by hFE).
1. Obtain the curve trace for a "Darlington Pair" of Bipolar Junction Transistors. A Darlington
Pair consists of two transistors with the first BJT driving the base terminal of the second
transistor as shown in Figure 1 below.
A. Set up the primary sweep voltages for V1 the same as shown in the lecture notes (see
the Darlington pair IV curve).
B. Set up the secondary sweep currents for 11 to be an order of magnitude smaller than
for the single BJT. In the Sweep Type box choose linear and enter the following 3
values: Start Value: 0, End Value: 8u and Increment: 1u (see lecture notes).
C. Describe the primary differences you observe between the single BJT Curve Trace and
that of the Darlington Pair. Discuss what might cause each difference.
Q1
11
Q2
V1
Q2N3904
Figure 1. A Darlington Pair of 2N3904 transistors in a…
2. Using the IV plots shown in Fig. 3 (and found in the reintroduction to PSpice) design a BJT
biasing circuit that results in the following parameters: VCE = 2 Vand ig = 40 μA. We
also require the power supply to be fixed at 5 Volts (this is where the load line intercepts
the iB =ic = 0 line). You may use the circuit shown in Example 1. Note that all resistor
values in Example 1 must be recalculated. Your solution for the base to ground and base
to collector resistors may not be unique.
A
circuit is given as shown.
(a) Find and label the circuit nodes.
(6) Determine I, I₁, I2 and V₂
I₂
+1
I
12V
ww
22
2
ти
+
보통 162
-
ти
4
52
12
50
602
I
1
Mw
Chapter 7 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 7 - (a) For the circuit shown in Figure 7.2, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters of...Ch. 7 - For the equivalent circuit shown in Figure 7.13,...Ch. 7 - The equivalent circuit in Figure 7.14 has circuit...Ch. 7 - The parameters in the circuit shown in Figure 7.15...Ch. 7 - For the circuit shown in Figure 7.2 1(a), the...Ch. 7 - Consider the circuit shown in Figure 7.22(a). The...Ch. 7 - For the emitterfollower circuit shown in Figure...Ch. 7 - The circuit shown in Figure 7.27(a) has parameters...Ch. 7 - Consider the common-base circuit shown in Figure...
Ch. 7 - The commonemitter circuit shown in Figure 7.34...Ch. 7 - A bipolar transistor has parameters o=120 ,...Ch. 7 - Prob. 7.9EPCh. 7 - For the circuit in Figure 7.41(a), the parameters...Ch. 7 - A bipolar transistor is biased at ICQ=120A and its...Ch. 7 - For the transistor described in Example 7.9 and...Ch. 7 - The parameters of a bipolar transistor are: o=150...Ch. 7 - The parameters of an nchannel MOSFET are...Ch. 7 - For the circuit in Figure 7.55, the transistor...Ch. 7 - An nchannel MOSFET has parameters Kn=0.4mA/V2 ,...Ch. 7 - An nchannel MOSFET has a unitygain bandwidth of...Ch. 7 - For a MOSFET, assume that gm=1.2mA/V . The basic...Ch. 7 - The transistor in the circuit in Figure 7.60 has...Ch. 7 - Consider the commonbase circuit in Figure 7.64....Ch. 7 - The cascode circuit in Figure 7.65 has parameters...Ch. 7 - Prob. 7.12TYUCh. 7 - For the circuit in Figure 7.72, the transistor...Ch. 7 - Describe the general frequency response of an...Ch. 7 - Describe the general characteristics of the...Ch. 7 - Describe what is meant by a system transfer...Ch. 7 - What is the criterion that defines a corner, or...Ch. 7 - Describe what is meant by the phase of the...Ch. 7 - Describe the time constant technique for...Ch. 7 - Describe the general frequency response of a...Ch. 7 - Sketch the expanded hybrid model of the BJT.Ch. 7 - Prob. 9RQCh. 7 - Prob. 10RQCh. 7 - Prob. 11RQCh. 7 - Sketch the expanded smallsignal equivalent circuit...Ch. 7 - Define the cutoff frequency for a MOSFET.Ch. 7 - Prob. 14RQCh. 7 - Why is there not a Miller effect in a commonbase...Ch. 7 - Describe the configuration of a cascode amplifier.Ch. 7 - Why is the bandwidth of a cascode amplifier...Ch. 7 - Why is the bandwidth of the emitterfollower...Ch. 7 - Prob. 7.1PCh. 7 - Prob. 7.2PCh. 7 - Consider the circuit in Figure P7.3. (a) Derive...Ch. 7 - Consider the circuit in Figure P7.4 with a signal...Ch. 7 - Consider the circuit shown in Figure P7.5. (a)...Ch. 7 - A voltage transfer function is given by...Ch. 7 - Sketch the Bode magnitude plots for the following...Ch. 7 - (a) Determine the transfer function corresponding...Ch. 7 - Consider the circuit shown in Figure 7.15 with...Ch. 7 - For the circuit shown in Figure P7.12, the...Ch. 7 - The circuit shown in Figure 7.10 has parameters...Ch. 7 - The transistor shown in Figure P7.14 has...Ch. 7 - Consider the circuit shown in Figure P7.15. The...Ch. 7 - The transistor in the circuit shown in Figure...Ch. 7 - For the common-emitter circuit in Figure P7.17,...Ch. 7 - The transistor in the circuit in Figure P7.20 has...Ch. 7 - For the circuit in Figure P7.21, the transistor...Ch. 7 - (a) For the circuit shown in Figure P7.22, write...Ch. 7 - Consider the circuit shown in Figure P7.23. (a)...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - A capacitor is placed in parallel with RL in the...Ch. 7 - The parameters of the transistor in the circuit in...Ch. 7 - Prob. D7.27PCh. 7 - The circuit in Figure P7.28 is a simple output...Ch. 7 - Reconsider the circuit in Figure P728. The...Ch. 7 - Consider the circuit shown in Figure P7.32. The...Ch. 7 - The commonemitter circuit in Figure P7.35 has an...Ch. 7 - Consider the commonbase circuit in Figure 7.33 in...Ch. 7 - Prob. 7.39PCh. 7 - The parameters of the transistor in the circuit in...Ch. 7 - In the commonsource amplifier in Figure 7.25(a) in...Ch. 7 - A bipolar transistor has fT=4GHz , o=120 , and...Ch. 7 - A highfrequency bipolar transistor is biased at...Ch. 7 - (a) The frequency fT of a bipolar transistor is...Ch. 7 - The circuit in Figure P7.48 is a hybrid ...Ch. 7 - Consider the circuit in Figure P7.49. Calculate...Ch. 7 - A common-emitter equivalent circuit is shown in...Ch. 7 - For the common-emitter circuit in Figure 7.41(a)...Ch. 7 - For the commonemitter circuit in Figure P7.52,...Ch. 7 - Consider the circuit in Figure P7.52. The resistor...Ch. 7 - The parameters of the circuit shown in Figure...Ch. 7 - The parameters of an nchannel MOSFET are kn=80A/V2...Ch. 7 - Find fT for a MOSFET biased at IDQ=120A and...Ch. 7 - Fill in the missing parameter values in the...Ch. 7 - (a) An nchannel MOSFET has an electron mobility of...Ch. 7 - A commonsource equivalent circuit is shown in...Ch. 7 - Prob. 7.60PCh. 7 - The parameters of an ideal nchannel MOSFET are...Ch. 7 - Figure P7.62 shows the highfrequency equivalent...Ch. 7 - For the FET circuit in Figure P7.63, the...Ch. 7 - The midband voltage gain of a commonsource MOSFET...Ch. 7 - Prob. 7.65PCh. 7 - Prob. 7.67PCh. 7 - The bias voltages of the circuit shown in Figure...Ch. 7 - For the PMOS commonsource circuit shown in Figure...Ch. 7 - In the commonbase circuit shown in Figure P7.70,...Ch. 7 - Repeat Problem 7.70 for the commonbase circuit in...Ch. 7 - In the commongate circuit in Figure P7.72, the...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- a) A silicon wafer is uniformly doped p-type with NA=10¹³/cm³. At T=0K, what are the equilibrium hole and electron concentrations?arrow_forward1016 1015 Ge 101 Si 1013 1012 GaAs 10" (( uວ) uot¤ງແລ້ວuo ວາ.ຂ ວາsuuuT 0101 601 801 107 10% Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following conditions. (n; =1010/cm³ at 300K) a) T 300 K, NA << ND, ND = 1015/cm³ b) T 300 K, NA = 9X1015/cm³, ND = 1016/cm³ c) T = 450 K, NA = 0, ND = 1014/cm³ d) T = 650 K, NA = 0, ND = 1014/cm³ 10° 200 300 400 500 600 700 T(K)arrow_forwardb) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, n = N and p = n2/N. Is the impurity a donor or an acceptor? Explain.arrow_forward
- d) For a silicon sample maintained at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations?arrow_forwarde) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n=10¹³/cm³, n = 2p, and NA 0. Determine n and ND.arrow_forwardSolve fo the voltage across the 1kohm resistor using superposition for the three following cases: only V1 present, only V2 present, and both V1 and V2 present.arrow_forward
- Semiconductor A has a band gap of 1eV, while semiconductor B has a band gap of 2eV. What is the ration of the intrinsic carrier concentrations in the two materials (n₁A/NB) at 300 K. Assume any differences in the carrier effective masses may be neglected.arrow_forwardc) The electron concentration in a piece of Si maintained at 300K under equilibrium conditions is 105/cm³. What is the hole concentration?arrow_forward5. Represent the following system in state-space form. Write A, B, C and D clearly in your answer. d³y d²y dt3 - +5y=2u dt²arrow_forward
- 3. Find the transfer function H(s) and frequency response H (w) of the following system whose differential equation is given by d¹y d³y +3. dy +5 dt4 dt3 dt - d²u du 4y = - 5 dt² dtarrow_forward1. Consider a plant that you want to control. The input u(t) and output y(t) of the plant are related by y(t) = 7 u(t) + w(t) where w(t) is an additive disturbance at the output which is bounded by -0.5 w(t) ≤0.5 for all time t. You want to build a controller so that the output follows a constant reference signal r(t) = where -15 ≤≤ 15. You will consider both open-loop and closed-loop for this problem. a) Sketch the block diagram of the plant. b) Please build an open-loop controller that sets the output to 7, assuming the disturbance is ignored. Please show your controller both as an equation and a block diagram. c) Say that you use the open-loop controller in part b, but now the disturbance w(t) is present. What is the maximum possible magnitude of error in the output for the reference signal? Suppose you have designed a feedback control for the plant where the controller has the form u(t) = K(r(t) − y(t)). Here K is the gain constant of the controller that you will design. d) Please…arrow_forward2. Suppose the Laplace transform of a causal signal x(t) is given by s² +2 X(s) = S³ + 1 Using the lookup tables for standard Laplace transforms and the Laplace transform properties, find the Laplace transforms of the following signals. You do not need to simplify the expressions. a) x₁(t) = e² x(t) + 38(t − 1) − (t − 2)² u(t − 2) b) x2(t) = x(2t - 1) + et u(t − 2)arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
Huffman Codes: An Information Theory Perspective; Author: Reducible;https://www.youtube.com/watch?v=B3y0RsVCyrw;License: Standard Youtube License