Fundamentals of Physics Extended
10th Edition
ISBN: 9781118230725
Author: David Halliday, Robert Resnick, Jearl Walker
Publisher: Wiley, John & Sons, Incorporated
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Question
Chapter 41, Problem 31P
To determine
To:
(a) calculate the maximum wavelength that will excite an electron in the valence band of diamond to the
(b) identify the part of the
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The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?
The maximum wavelength of light that a certain silicon photocell can detect is 1.11 mm.
(a) What is the energy gap (in electron volts) between the valence and conduction bands for this photocell?
(b) Explain why pure silicon is opaque.
Calculatea) the drift mobility b) the mean scattering time
Chapter 41 Solutions
Fundamentals of Physics Extended
Ch. 41 - Prob. 1QCh. 41 - Prob. 2QCh. 41 - Prob. 3QCh. 41 - Prob. 4QCh. 41 - Prob. 5QCh. 41 - Prob. 6QCh. 41 - Prob. 7QCh. 41 - Prob. 8QCh. 41 - Prob. 9QCh. 41 - Prob. 10Q
Ch. 41 - Prob. 11QCh. 41 - Prob. 1PCh. 41 - Prob. 2PCh. 41 - Prob. 3PCh. 41 - Prob. 4PCh. 41 - Prob. 5PCh. 41 - Prob. 6PCh. 41 - Prob. 7PCh. 41 - Prob. 8PCh. 41 - Prob. 9PCh. 41 - Prob. 10PCh. 41 - Prob. 11PCh. 41 - Prob. 12PCh. 41 - Prob. 13PCh. 41 - Prob. 14PCh. 41 - Prob. 15PCh. 41 - Prob. 16PCh. 41 - Prob. 17PCh. 41 - Prob. 18PCh. 41 - Prob. 19PCh. 41 - Prob. 20PCh. 41 - Prob. 21PCh. 41 - Prob. 22PCh. 41 - Prob. 23PCh. 41 - Prob. 24PCh. 41 - Prob. 25PCh. 41 - Prob. 26PCh. 41 - Prob. 27PCh. 41 - Prob. 28PCh. 41 - Prob. 29PCh. 41 - Prob. 30PCh. 41 - Prob. 31PCh. 41 - Prob. 32PCh. 41 - Prob. 33PCh. 41 - Prob. 34PCh. 41 - Prob. 35PCh. 41 - Prob. 36PCh. 41 - Prob. 37PCh. 41 - Prob. 38PCh. 41 - Prob. 39PCh. 41 - Prob. 40PCh. 41 - Prob. 41PCh. 41 - Prob. 42PCh. 41 - Prob. 43PCh. 41 - Prob. 44PCh. 41 - Prob. 45PCh. 41 - Prob. 46PCh. 41 - Prob. 47PCh. 41 - Prob. 48PCh. 41 - Prob. 49PCh. 41 - Prob. 50PCh. 41 - Prob. 51PCh. 41 - Prob. 52PCh. 41 - Prob. 53P
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- At room temperature, pure germanium has an almost completely filled valence band separated by a 0.67 eV gap from an almost completely empty conduction band. It is a poor electrical conductor, but its conductivity increases greatly when it is irradiated with electromagnetic waves of a certain maximum wavelength. What is that wavelength?arrow_forward(e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ 9.46 x 10⁹ cm-³ 0 m-3 2.40 x 1019 cm-3 B. C. D.arrow_forwardWhat mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.arrow_forward
- Q#07: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 micrometer (a) what is he energy gap (in eV) between the valence and conduction bands for this photocell (b) Explain why pure silicon is opaque.arrow_forwardK: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.arrow_forwardA semiconductor material is uniformly doped with Boron atoms. At t=0, excess carriers has been created to a concentration of 10^15 cm^3 .arrow_forward
- Assume a temperature of 300 K and fi nd the wavelength of the photon necessary to cause an electron to jump from the valence to the conduction band in (a) germanium, (b) silicon, (c) InAs, and (d) ZnS.arrow_forwardThe mean speed of conduction electron in Cu is electrons1.5 × 106 ms-1 and the frequency of vibration of the copper atoms at room temperature is about 4 × 1012 s-1. Estimate the drift mobility of electrons and the conductivity of Cu. The density of Cu is 8.96 g cm-3 and the atomic mass is 63.56 g mol-1.arrow_forwardThe effective density of states of a piece of silicon is Nc = 2x1319 cm³ in the conduction band at room temperature. Assume the intrinsic concentration, ni, is 1010 cm3. Suppose 0.1% of the equivalent density of states in the conduction band are filled with electrons at room temperature. (a) What is the doping concentration in the silicon? (b) What is the electron concentration in the silicon? (c) What is the hole concentration in the silicon? (d) What is the value of the Fermi-Dirac function f(E) at the conduction band edge?arrow_forward
- Silicon is doped with 3×1018 arsenic atoms/cm3 and 8 × 1018 boron atoms/cm3. (a) Is this n- or p-type silicon? (b) What are the hole and electron concentrations at room temperature?arrow_forwardIron has an atomic number Z-26, relative atomic mass of A=52 and a mass density of 7800 kg m-3, Estimate the number of conduction band electrons per m 3 in iron, assuming that each atom contributes two electrons to the conduction band. Recall that m e-9.1*10-31 kg, m p=1.67*10-27 kg, e=1.6*10-19 C, N A-6.022*10 23 mol-1 O 17.202 1028 17.482-1028 17.964*1028 O O 36.158 1028 O 58.725 1028arrow_forwardQ#04. (a) Calculate the number of atoms per unit area in (100), (110) and (111) planes of in bcc crystal with the lattice parameter of 2.5 angstrom.arrow_forward
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