Fundamentals of Physics Extended
10th Edition
ISBN: 9781118230725
Author: David Halliday, Robert Resnick, Jearl Walker
Publisher: Wiley, John & Sons, Incorporated
expand_more
expand_more
format_list_bulleted
Question
Chapter 41, Problem 16P
To determine
To calculate:
the number density (number per unit volume)
(a) for molecules of oxygen gas at 0.0oC and 1atm pressure.
(b) for
(c) ratio of results from (b) to (a).
the average distance between
(d) oxygen molecules.
(e) the conduction electrons in copper
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
Calculate the number density (number per unit volume) for (a) molecules of oxygen gas at 0.0°C and 1.0 atm pressure and (b) conduction electrons in copper. (c) What is the ratio of the latter to the former? What is the average distance between (d) the oxygen molecules and (e) the conduction electrons, assuming this distance is the edge length of a cube with a volume equal to the available volume per particle (molecule or electron)?
At what pressure, in atmospheres, would the number of molecules per unit volume in an ideal gas be equal to the number density of the conduction electrons in copper, with both gas and copper at temperature T =300 K?
A conductive wire has a conductivity of ( 0.649 × 10^-8) at room temperature are ( 5.8 x
1028) conduction electron/m.calculate the mobility,resistivity and relaxation time of
electrons
Chapter 41 Solutions
Fundamentals of Physics Extended
Ch. 41 - Prob. 1QCh. 41 - Prob. 2QCh. 41 - Prob. 3QCh. 41 - Prob. 4QCh. 41 - Prob. 5QCh. 41 - Prob. 6QCh. 41 - Prob. 7QCh. 41 - Prob. 8QCh. 41 - Prob. 9QCh. 41 - Prob. 10Q
Ch. 41 - Prob. 11QCh. 41 - Prob. 1PCh. 41 - Prob. 2PCh. 41 - Prob. 3PCh. 41 - Prob. 4PCh. 41 - Prob. 5PCh. 41 - Prob. 6PCh. 41 - Prob. 7PCh. 41 - Prob. 8PCh. 41 - Prob. 9PCh. 41 - Prob. 10PCh. 41 - Prob. 11PCh. 41 - Prob. 12PCh. 41 - Prob. 13PCh. 41 - Prob. 14PCh. 41 - Prob. 15PCh. 41 - Prob. 16PCh. 41 - Prob. 17PCh. 41 - Prob. 18PCh. 41 - Prob. 19PCh. 41 - Prob. 20PCh. 41 - Prob. 21PCh. 41 - Prob. 22PCh. 41 - Prob. 23PCh. 41 - Prob. 24PCh. 41 - Prob. 25PCh. 41 - Prob. 26PCh. 41 - Prob. 27PCh. 41 - Prob. 28PCh. 41 - Prob. 29PCh. 41 - Prob. 30PCh. 41 - Prob. 31PCh. 41 - Prob. 32PCh. 41 - Prob. 33PCh. 41 - Prob. 34PCh. 41 - Prob. 35PCh. 41 - Prob. 36PCh. 41 - Prob. 37PCh. 41 - Prob. 38PCh. 41 - Prob. 39PCh. 41 - Prob. 40PCh. 41 - Prob. 41PCh. 41 - Prob. 42PCh. 41 - Prob. 43PCh. 41 - Prob. 44PCh. 41 - Prob. 45PCh. 41 - Prob. 46PCh. 41 - Prob. 47PCh. 41 - Prob. 48PCh. 41 - Prob. 49PCh. 41 - Prob. 50PCh. 41 - Prob. 51PCh. 41 - Prob. 52PCh. 41 - Prob. 53P
Knowledge Booster
Similar questions
- In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.arrow_forwardSilicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?arrow_forwardAssuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3 x 10' (0-m)* and 19.32 g/cm?, respectively. (a) Calculate the number of free electrons per cubic meter for gold (b) Compute the electron mobility for gold.arrow_forward
- Aluminum has a density of 2.70 x 103 kg/m3 at a temperature of 293 K, and its molar mass is 26.98 g. (a) Compute the number of aluminum atoms per unit volume at that temperature. (b) Use the fact that EF 11.63 eV for aluminum at 293 K to fi nd the number density of free electrons. (c) Combine your results from (a) and (b) to estimate the number of conduction electrons per atom—the valence number for aluminumarrow_forwardQ 2/ If the electron density of a pure semiconductor at a temperature of 17 C is m3/1016, and when the temperature increases by ten times, the electron density becomes m3/1019. If impurities of arsenic are added to one end of this material, the concentration of the majority charge carriers becomes m3/1023, and impurities of boron are added to the other end, so that the concentration of the majority charge carriers becomes m3/1021, thus forming a p-n junction with a contact area of 10-7 m2. Calculate what I am at 17.C 1- Fermi position at each end 2- Energy gap in ev 3- The ratio of the current of holes to the current of electrons through the junction if you know that the mobility of electrons is m/Vs 0.5 and the mobility of holes is m/Vs 0.25 and the length of the minority electrons is 0.4 mm and the length of the minority holes is 0.3 mm 4- Density of carriers for each party (majority and minority) 5- The effort of the divider 6- The junction current at an amplitude of 0.4 7- The…arrow_forwardQuestion-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.arrow_forward
- Since the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit energy per unit volume at this energy level? Since the resistivity of zinc is 5.90 x 10^-8 ohm.m, calculate the average time interval between collisions of electrons.arrow_forwardSilver has exactly one conduction electron per atom. (a) Use the density of silver (1.05 x10^4 kg/m^3) and the mass of 107.87 g/mol to find the density of conduction electrons insilver. (b) At what temperature is A = 1 for silver (where A is the normalization constantin the Maxwell-Boltzmann distribution)? (c) At what temperature is A = 10^-3?arrow_forwardCalculatea) the drift mobility b) the mean scattering timearrow_forward
- Consider the density of states N(E) of a conductor. (a) Obtain an analytical expression for the density of states at Fermi energy N(E_F) as a function of m and n, where m is the electron mass and n is the number of conduction electrons per unit volume. This expression should be in units of m^{ -2}eV^{-1} (meter^{-2}. electron-Volt^{-1}). (b) Calculate the numerical value of N(E_F) for Copper. To estimate the value of n, consider the following data for Copper: molar mass 64.54 g/mol and density 8.96 g/cm^{3}. (c) Compare the result of part (b) with the result obtained from the N(E) x E curve and the analytical expression for N(E). Do the values agree?arrow_forwardWhat is the number density of conduction electrons in gold, which is a monovalent metal? Use the molar mass and density provided in Appendix Farrow_forwardIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Modern PhysicsPhysicsISBN:9781111794378Author:Raymond A. Serway, Clement J. Moses, Curt A. MoyerPublisher:Cengage Learning
Modern Physics
Physics
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Cengage Learning